Abstract:The problem of achieving high light extraction efficiency in Al-rich AlxGa1-xN is of paramount importance for the realization of AlGaN-based deep ultraviolet (DUV) optoelectronic devices. To solve this problem, we investigate the microscopic mechanism of valence band inversion and light polarization, a crucial factor for enhancing light extraction efficiency, in Al-rich AlxGa1-xN alloy using the Heyd-Scuseria-Ernzerhof hybrid functional, local-density approximation with 1/2 occupation, and the Perdew-Burke-Ernzerhof functional, in which the spin-orbit coupling effect is included. We find that the microscopic Ga-atom distribution can effectively modulate the valence band structure of Al-rich AlxGa1-xN. Moreover, we prove that the valence band arrangement in the decreasing order of heavy hole, light hole, and crystal-field split-off hole can be realized by using nanoscale (AlN)(m)/(GaN)(n) (m>n) super-lattice (SL) substituting for Al-rich AlxGa1-xN disorder alloy as the active layer of optoelectronic devices due to the ultra-thin GaN layer modulation. The valence band maximum, i.e., the heavy hole band, has p(x)- and p(y)-like characteristics and is highly localized in the SL structure, which leads to the desired transverse electric (TE) polarized (E perpendicular to c) light emission with improved light extraction efficiency in the DUV spectral region. Some important band-structure parameters and electron/hole effective masses are also given. The physical origin for the valence band inversion and TE polarization in (AlN)(m)/(GaN)(n) SL is analyzed in depth.

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Fabrication of AlGaN Nanorods with Different Al Compositions for Emission Enhancement in UV Range

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Polarity Control and Nanoscale Optical Characterization of AlGaN-Based Multiple-Quantum-Wells for Ultraviolet C Emitters

Enhancement of Optical Polarization Degree of AlGaN Quantum Wells by Using Staggered Structure.

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Optical Properties of Nanopillar AlGaN/GaN MQWs for Ultraviolet Light-Emitting Diodes.

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Nanostructure analysis of InGaN/GaN quantum wells based on semi-polar-faced GaN nanorods

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