Optical Transitions Inpbte∕cdtequantum Dots
T. N. Xu,H. Z. Wu,J. X. Si,P. J. McCann
DOI: https://doi.org/10.1103/physrevb.76.155328
IF: 3.7
2007-01-01
Physical Review B
Abstract:Recently, intense room-temperature midinfrared luminescent emission has been observed in high-symmetry PbTe quantum dots (QDs) embedded in a (001)-oriented CdTe single crystalline matrix [W. Heiss , Appl. Phys. Lett. 88, 192109 (2006)]. To interpret the optical transition in these newly realized QDs, we have developed a four-band (k) over right arrow.(p) over right arrow model that takes into account the anisotropic effects of the band structure and finite-confinement potential in the QDs. The high order term o(k(i)(4)) in the Hamiltonian is calculated using perturbation approximation methods. The simulation of the spontaneous emission of PbTe/CdTe QDs shows that two types of quantum structures were formed by the thermal annealing of the PbTe/CdTe quantum wells, as reported by Heiss , and the calculations are in good agreement with the experimental observations of the dot sizes and photoluminescence. The model can be extended to the description of interband optical transitions in other IV-VI QDs, such as PbSe/PbTe and PbSe/PbEuTe QDs that usually have a large size (with a typical lateral size of 50 nm and height of 20 nm) and small quantum confinement potential (< 100 meV) and are oriented in different directions.