Abstract:We present atomistic computations within an empirical pseudopotential framework for the electron $s$-shell ground state $g$ tensor of InGaAs quantum dots (QDs) embedded to host matrices that grant electronic confinement. A large structural set consisting of geometry, size, and molar fraction variations is worked out which also includes a few representative uniform strain cases. The tensor components are observed to display insignificant discrepancies even for the highly anisotropic shapes. The family of $g$-factor curves associated with these parameter combinations coalesces to a single universal one when plotted as a function of the gap energy, thus confirming a recent assertion reached under much restrictive conditions. Our work extends its validity to alloy QDs with various shapes and finite confinement that allows for penetration to the host matrix, placing it on a more realistic basis. Accordingly, the electrons in InGaAs QDs having $s$-shell transition energies close to 1.13 eV will be least susceptible to magnetic field. We also show that low indium concentration offer limited $g$-factor tunability under shape or confinement variations. These findings can be taken into consideration in the fabrication and the use of InGaAs QDs with $g$-near-zero or other targeted $g$ values for spintronic or electron spin resonance-based direct quantum logic applications.

Anisotropic Electron Spins in Self-Assembled Quantum Dots

Electrong-factor Distribution in Self-Assembled Quantum Dots

Anisotropic Hole Spins in Single and Coupled Self-Assembled Quantum Dots

Tuning of Electron G Factors by Electric Fields in Asymmetric InAs Quantum Dot Molecules

G-Factor Tuning In Self-Assembled Quantum Dots

Parametric Properties of the Electron Spin Relaxation in InAs Quantum Dots

Strong electrically tunable exciton g-factors in an individual quantum dots due to hole orbital angular momentum quenching

Landé g factors in elongated InAs/GaAs self-assembled quantum dots

Zero G Factors and Nonzero Orbital Momenta in Self-Assembled Quantum Dots

Electron-Hole Alignment in InAs/GaAs Self-Assembled Quantum Dots: Effects of Chemical Composition and Dot Shape

Electrical Tuning of Exciton G Factors in Quantum Dot Molecules: Effect of Hole Localization

g-factor engineering and control in self-assembled quantum dots

Electron and hole effective masses in self-assembled quantum dots

Electronic Structure Of Self-Assembled Inas/Inp Quantum Dots: Comparison With Self-Assembled Inas/Gaas Quantum Dots

Electron ground state $g$ factor in embedded InGaAs quantum dots: An atomistic study

Measurements of Anisotropic G-Factors for Electrons in InSb Nanowire Quantum Dots

Electronic structure of self-assembled InAs/InP quantum dots: A Comparison with self-assembled InAs/GaAs quantum dots

Study of Self-organized InAs/GaAs Quantum-dots Using Double Crystal X-ray Diffraction

Electron energy state spin-splitting in nanoscale InAs/GaAs semiconductor quantum dots and rings

Large anisotropy of spin-orbit interaction in a single InAs self-assembled quantum dot

Electrically Tunable Electron G Factors in Coupled InAs/GaAs Pyramid Quantum Dots