Abstract:To deal with the Hamiltonian model in InAs QDs with a single electron, we’ve taken the SO interaction as a perturbation term, calculated the SO matrix elements under Fock-Darwin eigenfunction which are used for second order corrections on the energies and wave functions, and considered the influence of new energy levels on g factor and effective mass m*. The expression of phonon-assisted electron spin relaxation rate Γ in InAs QDs is deduced, which shows different dependences on confined potential frequency ω0, temperature T, vertical height z0 and magnetic field B. Among them, temperature for the electron spin relaxation plays a dominant role, followed by lateral confinement potential frequency, magnetic field and the vertical height, in order of importance. (1) Growth of ω0, which corresponds to the decrease of the effective transverse size d in InAs QDs, suppresses the increase of the rate Γ. (2) The temperature T affects the rate Γ evidently, which will reduce the inhibition of ω0 on Γ. With increase of the temperature from 1 K to 7 K, the spin inversion relaxation rate grows explosively from 103 s－1 to 108 s－1. (3) The rate Γ decreases with the growth of the vertical height z0 and have the order of magnitude 100－103 s-1 at T=1 K, whereas the influence of the temperature increase (at T=6 K) on the rate will gradually exceed that of the height growth. (4) At different frequencies ω0 all curves of the rate Γ versus magnetic field B have a peak that almost appears at the same field, which is attributed to the contribution of the Zeeman term H ^ Z exceeding that of H ^ SO since there is a considerable g factor in InAs material.

Measurements of Anisotropic G-Factors for Electrons in InSb Nanowire Quantum Dots

Anisotropies of the G-Factor Tensor and Diamagnetic Coefficient in Crystal-Phase Quantum Dots in InP Nanowires

Giant, Level-Dependent G Factors in InSb Nanowire Quantum Dots.

Measurements of the spin-orbit interaction and Landé g factor in a pure-phase InAs nanowire double quantum dot in the Pauli spin-blockade regime

Quantized Conductance and Large G-Factor Anisotropy in InSb Quantum Point Contacts.

Electronic g-factor and tunable spin-orbit coupling in a gate-defined InSbAs quantum dot

Parametric Properties of the Electron Spin Relaxation Due to Spin-Orbit Interaction in Inas Quantum Dots

Field Tuning the G-Factor in InAs Nanowire Double Quantum Dots

Anisotropic g -Factor and Spin–Orbit Field in a Germanium Hut Wire Double Quantum Dot

Spin-orbit Coupling and Electric-Dipole Spin Resonance in a Nanowire Double Quantum Dot

Anisotropic Electron Spins in Self-Assembled Quantum Dots

Anisotropic g-Factor and Spin-Orbit Field in a Ge Hut Wire Double Quantum Dot

Variable and Orbital-Dependent Spin-Orbit Field Orientations in an InSb Double Quantum Dot Characterized via Dispersive Gate Sensing

Electron ground state $g$ factor in embedded InGaAs quantum dots: An atomistic study

Spin Quantum Beats of Bright and Dark Excitonic States in Neutral Inas Quantum Dots

G-Factor and Exchange Energy in A Few-Electron Lateral Ingaas Quantum Dot

Magnetic Transport Measurements of Spin–orbit and Hyperfine Interactions in a Ge Hut Wire Double Quantum Dot

Electrong-factor Distribution in Self-Assembled Quantum Dots

Parametric Properties of the Electron Spin Relaxation in InAs Quantum Dots

Electron g factor anisotropy in asymmetric III–V semiconductor quantum wells

Quantum transport in an ambipolar InSb nanowire quantum dot device