Abstract:In this work, we probe the sensitivity of hole-spin properties to hole occupation number in a planar silicon double-quantum dot device fabricated on a 300 mm integrated platform. Using DC transport measurements, we investigate the g-tensor and spin-relaxation induced leakage current within the Pauli spin-blockade regime as a function of magnetic-field orientation at three different hole occupation numbers. We find the g-tensor and spin-leakage current to be highly anisotropic due to light-hole/heavy-hole mixing and spin-orbit mixing, but discover the anisotropies to be relatively insensitive to the dot hole number. Furthermore, we extract the dominant inter-dot spin-orbit coupling mechanism as surface Dresselhaus, with an in-plane orientation parallel to transport and magnitude $\boldsymbol{t_{SO}}$ $\approx$ 300 neV. Finally, we observe a strong correlation between the g-factor difference ($\delta$$\boldsymbol{g}$) between each dot and the spin-leakage current anisotropy, as a result of $\delta$$\boldsymbol{g}$ providing an additional spin-relaxation pathway, and should be considered. ]Our findings indicate that hole-spin devices are not as sensitive to precise operating conditions as anticipated. This has important implications optimizing spin control and readout based on magnetic-field direction, together with tuning large arrays of QDs as spin-qubits.

Anisotropic Hole Spins in Single and Coupled Self-Assembled Quantum Dots

Anisotropic Electron Spins in Self-Assembled Quantum Dots

Zero G Factors and Nonzero Orbital Momenta in Self-Assembled Quantum Dots

Spin Polarization in Self-Assembled Quantum Dots

Spin Polarization In A Single Inas/Inp Quantum Dot

Hyperfine coupling of hole and nuclear spins in symmetric (111)-grown GaAs quantum dots

Electron-Hole Alignment in InAs/GaAs Self-Assembled Quantum Dots: Effects of Chemical Composition and Dot Shape

Landé g factors in elongated InAs/GaAs self-assembled quantum dots

Electrong-factor Distribution in Self-Assembled Quantum Dots

Electron and hole effective masses in self-assembled quantum dots

Electronic structure of self-assembled InAs/InP quantum dots: A Comparison with self-assembled InAs/GaAs quantum dots

Hole Spin Mixing in InAs Quantum Dot Molecules

Consequences of Spin-Orbit Coupling at the Single Hole Level: Spin-Flip Tunneling and the Anisotropic g Factor

Probing g-tensor reproducibility and spin-orbit effects in planar silicon hole quantum dots

G-Factor Tuning In Self-Assembled Quantum Dots

Strong electrically tunable exciton g-factors in an individual quantum dots due to hole orbital angular momentum quenching

Tuning of the Hole Spin Relaxation Time in Single Self-Assembled In1−xGaxAs/GaAs Quantum Dots by Electric Field

Spin States of Holes in Ge/Si Nanowire Quantum Dots.

Large anisotropy of spin-orbit interaction in a single InAs self-assembled quantum dot

Electrical Tuning of Exciton G Factors in Quantum Dot Molecules: Effect of Hole Localization

Electrically-tunable hole g-factor of an optically-active quantum dot for fast spin rotations