Abstract:Considering the increasing number of experimental results in the manufacturing process of quantum dots with different geometries, and the fact that most numerical methods that can be used to investigate quantum dots with non-trivial geometries require large computational capacities the finite element method becomes an incredibly attractive tool for modeling semiconductor QDs. In the current article, the authors have used the FEM to obtain the first twenty-six probability densities and energy values for the following GaAs structures: rectangular, spherical, cylindrical, ellipsoidal, spheroidal, and conical QDs, quantum rings, nanotadpoles, and nanostars. The results of the numerical calculations were compared with the exact analytical solutions and a good deviation was obtained. The ground states energies dependence on the element size was obtained to find the optimal parameter for the investigated structures. The abovementioned calculation results were used to obtain valuable insight into the effects of the size quantization s dependence on the shape of the QDs. Additionally, the wavefunctions and energies of spherical CdSe/CdS quantum dots were obtained while taking into account the diffusion effects on the potential depth with the use of a piecewise Woods-Saxon potential. The diffusion of the effective mass and the dielectric permittivity is obtained with the use of a normal Woods-Saxon potential. A structure with a quasi-type-II band alignment was obtained at the core size of 2.2nm. This result is consistent with the experimental data.

Electron and hole effective masses in self-assembled quantum dots

Electronic structure of self-assembled InAs/InP quantum dots: A Comparison with self-assembled InAs/GaAs quantum dots

Electron-Hole Alignment in InAs/GaAs Self-Assembled Quantum Dots: Effects of Chemical Composition and Dot Shape

Effective-Mass Theory for Hierarchical Self-Assembly of Gaas/Alxga1-Xas Quantum Dots

Anisotropic Hole Spins in Single and Coupled Self-Assembled Quantum Dots

Anisotropic Electron Spins in Self-Assembled Quantum Dots

Effective-mass Theory for InAs/GaAs Strained Coupled Quantum Dots.

Zero G Factors and Nonzero Orbital Momenta in Self-Assembled Quantum Dots

Landé g factors in elongated InAs/GaAs self-assembled quantum dots

Conduction Band Spectra in Self-Assembled Inas/Gaas Dots: A Comparison of Effective Mass and an Eight-Band Approach

Electronic Propertiesof InAs/GaAs Self‐assembled Quantum Dots: Beyond the Effective Mass Approximation

Electron and Hole G Tensors of Neutral and Charged Excitons in Single Quantum Dots by High-Resolution Photocurrent Spectroscopy

Electronic phase diagrams of carriers in self-assembled InAs/GaAs quantum dots: violation of Hund's rule and the Aufbau principle for holes

Electronic structures of (In,Ga)As/GaAs quantum dot molecules made of dots with dissimilar sizes

Electrong-factor Distribution in Self-Assembled Quantum Dots

Atomistic pseudopotential calculations of the optical properties of InAs/InP self-assembled quantum dots

Valence band offset, strain and shape effects on confined states in self-assembled InAs/InP and InAs/GaAs quantum dots

G-Factor Tuning In Self-Assembled Quantum Dots

Electron and hole energy levels in InAs/GaAs quantum dots: Size and magnetic field effects

Electrical Tuning of Exciton G Factors in Quantum Dot Molecules: Effect of Hole Localization

Modelling of Quantum Dots with the Finite Element Method