Abstract:To deal with the Hamiltonian model in InAs QDs with a single electron, we’ve taken the SO interaction as a perturbation term, calculated the SO matrix elements under Fock-Darwin eigenfunction which are used for second order corrections on the energies and wave functions, and considered the influence of new energy levels on g factor and effective mass m*. The expression of phonon-assisted electron spin relaxation rate Γ in InAs QDs is deduced, which shows different dependences on confined potential frequency ω0, temperature T, vertical height z0 and magnetic field B. Among them, temperature for the electron spin relaxation plays a dominant role, followed by lateral confinement potential frequency, magnetic field and the vertical height, in order of importance. (1) Growth of ω0, which corresponds to the decrease of the effective transverse size d in InAs QDs, suppresses the increase of the rate Γ. (2) The temperature T affects the rate Γ evidently, which will reduce the inhibition of ω0 on Γ. With increase of the temperature from 1 K to 7 K, the spin inversion relaxation rate grows explosively from 103 s－1 to 108 s－1. (3) The rate Γ decreases with the growth of the vertical height z0 and have the order of magnitude 100－103 s-1 at T=1 K, whereas the influence of the temperature increase (at T=6 K) on the rate will gradually exceed that of the height growth. (4) At different frequencies ω0 all curves of the rate Γ versus magnetic field B have a peak that almost appears at the same field, which is attributed to the contribution of the Zeeman term H ^ Z exceeding that of H ^ SO since there is a considerable g factor in InAs material.

Tuning The Exciton G Factor In Single Inas/Inp Quantum Dots

G-Factor Tuning In Self-Assembled Quantum Dots

Strong electrically tunable exciton g-factors in an individual quantum dots due to hole orbital angular momentum quenching

Electrical Tuning of Exciton G Factors in Quantum Dot Molecules: Effect of Hole Localization

Tuning Quantum Dot States with Optical Fields

Field Tuning the G-Factor in InAs Nanowire Double Quantum Dots

Photoluminescence of Single, Site-Selected, InAs∕InP Quantum Dots in High Magnetic Fields

Electrically-tunable hole g-factor of an optically-active quantum dot for fast spin rotations

Anisotropic Electron Spins in Self-Assembled Quantum Dots

Parametric Properties of the Electron Spin Relaxation Due to Spin-Orbit Interaction in Inas Quantum Dots

Tuning of the Hole Spin Relaxation Time in Single Self-Assembled In1−xGaxAs/GaAs Quantum Dots by Electric Field

In Situ Tuning Biexciton Antibinding-Binding Transition and Fine-Structure Splitting Through Hydrostatic Pressure in Single Ingaas Quantum Dots

Electron ground state $g$ factor in embedded InGaAs quantum dots: An atomistic study

Zero G Factors and Nonzero Orbital Momenta in Self-Assembled Quantum Dots

Electron and Hole G Tensors of Neutral and Charged Excitons in Single Quantum Dots by High-Resolution Photocurrent Spectroscopy

G-Factor and Exchange Energy in A Few-Electron Lateral Ingaas Quantum Dot

Tuning Photoluminescence of Single Inas Quantum Dot by Electric Field

Landé g factors in elongated InAs/GaAs self-assembled quantum dots

Parametric Properties of the Electron Spin Relaxation in InAs Quantum Dots

Electronic g-factor and tunable spin-orbit coupling in a gate-defined InSbAs quantum dot

Electron and hole g factors in InAs/InAlGaAs self-assembled quantum dots emitting at telecom wavelengths