Abstract:We present a detailed investigation into the optical characteristics of individual InAs quantum dots (QDs) grown by metalorganic chemical vapor deposition, with low temperature emission in the telecoms window around 1300 nm. Using micro-photoluminescence (PL) spectroscopy we have identified neutral, positively charged, and negatively charged exciton and biexciton states. Temperature-dependent measurements reveal dot-charging effects due to differences in carrier diffusivity. We observe a pronounced linearly polarized splitting of the neutral exciton and biexciton lines (~250 ueV) resulting from asymmetry in the QD structure. This asymmetry also causes a mixing of the excited trion states which is manifested in the fine structure and polarization of the charged biexciton emission; from this data we obtain values for the ratio between the anisotropic and isotropic electron-hole exchange energies of (Delta1)/(Delta0)= 0.2--0.5. Magneto-PL spectroscopy has been used to investigate the diamagnetic response and Zeeman splitting of the various exciton complexes. We find a significant variation in g-factor between the exciton, the positive biexciton, and the negative biexciton; this is also attributed to anisotropy effects and the difference in lateral extent of the electron and hole wavefunctions.

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Photoluminescence of a single InAs quantum dot molecule under applied electric field

Tuning The Exciton G Factor In Single Inas/Inp Quantum Dots

Probing the Dark-Exciton States of a Single Quantum Dot Using Photocurrent Spectroscopy in a Magnetic Field

Electronic and Structural Properties of Interdiffused Self-Assembled Quantum Dots from Magneto-Photoluminescence

Photoluminescence of patterned arrays of vertically stacked InAs/GaAs quantum dots

InAs Quantum Dots for Quantum Information Processing

Combined atomic force microscopy and photoluminescence imaging to select single InAs/GaAs quantum dots for quantum photonic devices

Shaping InAs Quantum Dot Photoluminescence Using GaAs Nanoresonator Arrays

Tuning Photoluminescence of Single Inas Quantum Dot by Electric Field

Singlet-triplet transition in a few-electron lateral InGaAs-InAlAs quantum dot

Magneto-optical Properties of Self-Assembled InAs Quantum Dots for Quantum Information Processing

Fine structure and magneto-optics of exciton, trion, and charged biexciton states in single InAs quantum dots emitting at 1.3 um

Fine structure of excitons in InAs quantum dots on GaAs(110) planar layers and nanowire facets

Quantum Dot Photoluminescence Enhancement in GaAs Nanopillar Oligomers Driven by Collective Magnetic Modes

Growth and magnetic properties of self-assembled (In, Mn)As quantum dots

Charge State Control in Single Inas/Gaas Quantum Dots by External Electric and Magnetic Fields

Electronic and optical properties of Janus black arsenic-phosphorus AsP quantum dots under magnetic field

Spontaneous emission control of single quantum dots by electromechanical tuning of a photonic crystal cavity