Abstract:Lattice mismatch in epitaxial layered heterostructures with small characteristic lengths induces large, spatially nonuniform strains. The components of the strain tensor have been shown experimentally to affect the electronic properties of semiconductor structures. Here, a technique is presented for calculating the influence of strain on electronic properties. First, the linear elastic strain in a quantum dot or wire is determined by a finite element calculation. A strain-induced potential field that shifts and couples the valence subbands in the structure is then determined from deformation potential theory. The time-independent Schrödinger equation, including the nonuniform strain-induced potential and a potential due to the heterostructure layers, is then solved, also by means of the finite element method. The solution consists of the wave functions and energies of states confined to the active region of the structure; these are the features which govern the electronic and transport properties of devices. As examples, two SixGe1−x submicron resonant tunneling devices, a quantum wire with two-dimensional confinement and a quantum dot with three-dimensional confinement, are analyzed. Experimentally measured resonant tunneling current peaks corresponding to the valence subbands in the material are modeled by generating densities of confined states in the structures. Size and composition-dependent strain effects are examined for both devices. In both the quantum dot and the quantum wire, the strain effects on the wave functions and energies of confined states are evident in the calculated densities of confined states in the structures, which are found to be consistent with experimentally measured tunneling current/voltage curves for resonant tunneling diodes.

Strain effects in and crystal structures of self-assembled InAs/GaAs quantum dots

The Influence Of Graded Inxga1-Xas On Strain Distribution And The Band Gap In The Inas/Gaas Quantum Dots

Valence band offset, strain and shape effects on confined states in self-assembled InAs/InP and InAs/GaAs quantum dots

Effect of Strain on the Growth of InAs/GaSb Superlattices: An X-Ray Study

Effect of Thin Gaas Tensile-Strained Layer on Inas Quantum Dots on Inp (001) Substrate Grown by Lp-Movpe

Effect of post-growth annealing on the optical properties of InAs/GaAs quantum dots: A tight-binding study

Electron and hole energy levels in InAs/GaAs quantum dots: Size and magnetic field effects

Difference of luminescent properties between strained InAsP/InP and strain-compensated InAsP/InGaAsP MQWs

Effects of microscopic strain distribution on Ga(1-x)In(x)As quantum wires grown by strain-induced lateral ordering

Strain tensor and electron and hole spectra in self-assembled InGaAs/GaAs and SiGe/Si quantum dots

Strain field of InAs QDs on GaAs (001) substrate surface: characterization by synchrotron X-ray Renninger scanning

Self-assembled Semiconductor Structures: Electronic and Optoelectronic Properties

Influence of Capping Layer and Atomic Interdiffusion on the Strain Distribution in Single and Double Self-Assembled Inas/Gaas Quantum Dots

Large and uniform optical emission shifts in quantum dots externally strained along their growth axis

Effects Of Internal Strain And External Pressure On Electronic Structures And Optical Transitions Of Self-Assembled Inxga1-Xas/Gaas Quantum Dots: An Experimental And Theoretical Study

Influence of the amount of InAs on InAs quantum dots on thin GaAs tensile-strained layer on (001) InP substrate

Finite element analysis of strain effects on electronic and transport properties in quantum dots and wires

Effects Of Gaas On Photoluminescence Properties Of Self-Assembled Inas Quantum Dots

Strain effects on valence band structure of In0.7Ga0.3As: From bulk to thin film

Strain Distribution And Electronic Spectra Of Inas/Gaas Self-Assembled Dots: An Eight-Band Study

The Effect of Growth Temperature on InAs Quantum Dots Grown by MOCVD