Abstract:To deal with the Hamiltonian model in InAs QDs with a single electron, we’ve taken the SO interaction as a perturbation term, calculated the SO matrix elements under Fock-Darwin eigenfunction which are used for second order corrections on the energies and wave functions, and considered the influence of new energy levels on g factor and effective mass m*. The expression of phonon-assisted electron spin relaxation rate Γ in InAs QDs is deduced, which shows different dependences on confined potential frequency ω0, temperature T, vertical height z0 and magnetic field B. Among them, temperature for the electron spin relaxation plays a dominant role, followed by lateral confinement potential frequency, magnetic field and the vertical height, in order of importance. (1) Growth of ω0, which corresponds to the decrease of the effective transverse size d in InAs QDs, suppresses the increase of the rate Γ. (2) The temperature T affects the rate Γ evidently, which will reduce the inhibition of ω0 on Γ. With increase of the temperature from 1 K to 7 K, the spin inversion relaxation rate grows explosively from 103 s－1 to 108 s－1. (3) The rate Γ decreases with the growth of the vertical height z0 and have the order of magnitude 100－103 s-1 at T=1 K, whereas the influence of the temperature increase (at T=6 K) on the rate will gradually exceed that of the height growth. (4) At different frequencies ω0 all curves of the rate Γ versus magnetic field B have a peak that almost appears at the same field, which is attributed to the contribution of the Zeeman term H ^ Z exceeding that of H ^ SO since there is a considerable g factor in InAs material.

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Effects Of Internal Strain And External Pressure On Electronic Structures And Optical Transitions Of Self-Assembled Inxga1-Xas/Gaas Quantum Dots: An Experimental And Theoretical Study

Influence of Capping Layer and Atomic Interdiffusion on the Strain Distribution in Single and Double Self-Assembled Inas/Gaas Quantum Dots

Electronic and nonlinear optical properties in Al x Ga 1 − x As/GaAs Gaussian confinement quantum dot under applied electric field

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Formation of Strain-Induced Quantum Dots in Gated Semiconductor Nanostructures

Exciton polarization, fine structure splitting and quantum dot asymmetry under uniaxial stress

Strain effects in and crystal structures of self-assembled InAs/GaAs quantum dots

Parametric Properties of the Electron Spin Relaxation in InAs Quantum Dots

Finite Element Analysis on Stress Distribution in Buried Quantum Dots

Effects of charged defects on the electronic and optical properties of self-assembled quantum dots

The influence of surface stress on the equilibrium shape of strained quantum dots

Mesoscopic Elastic Distortions in GaAs Quantum Dot Heterostructures

Multiphysics Simulation of Self-Heating-Induced Thermal Stress Effects on Quantum Transport in Gate-All-Around Nanosheet Field Effect Transistors

Valence band offset, strain and shape effects on confined states in self-assembled InAs/InP and InAs/GaAs quantum dots

Systematic study of Ga$_{1-x}$In$_x$As self-assembled quantum wires with different interfacial strain relaxation

Theory of strain tunning exction coupling in self-assembled InAs/GaAs quantum dots

Finite element method simulation of electronic and optical properties in multi-InAs/GaAs quantum dots