Abstract:Lattice mismatch in epitaxial layered heterostructures with small characteristic lengths induces large, spatially nonuniform strains. The components of the strain tensor have been shown experimentally to affect the electronic properties of semiconductor structures. Here, a technique is presented for calculating the influence of strain on electronic properties. First, the linear elastic strain in a quantum dot or wire is determined by a finite element calculation. A strain-induced potential field that shifts and couples the valence subbands in the structure is then determined from deformation potential theory. The time-independent Schrödinger equation, including the nonuniform strain-induced potential and a potential due to the heterostructure layers, is then solved, also by means of the finite element method. The solution consists of the wave functions and energies of states confined to the active region of the structure; these are the features which govern the electronic and transport properties of devices. As examples, two SixGe1−x submicron resonant tunneling devices, a quantum wire with two-dimensional confinement and a quantum dot with three-dimensional confinement, are analyzed. Experimentally measured resonant tunneling current peaks corresponding to the valence subbands in the material are modeled by generating densities of confined states in the structures. Size and composition-dependent strain effects are examined for both devices. In both the quantum dot and the quantum wire, the strain effects on the wave functions and energies of confined states are evident in the calculated densities of confined states in the structures, which are found to be consistent with experimentally measured tunneling current/voltage curves for resonant tunneling diodes.

Formation of Strain-Induced Quantum Dots in Gated Semiconductor Nanostructures

Calculation of Elastic Strain Fields for Single Ge/Si Quantum Dots

Reducing strain fluctuations in quantum dot devices by gate-layer stacking

Finite element analysis of strain effects on electronic and transport properties in quantum dots and wires

Strain Induced Quantum Effect in Semiconductors

Effects of Strain in Low-Dimensional Semiconductor Structures

Strain Engineered Band Structure and Optical Properties of Confined GaAs Quantum Dots

Strain Effects on Resonant Parameters in Asymmetric In1−xGaxAs Quantum Dot Molecules

Local-Strain-Induced Charge Carrier Separation and Electronic Structure Modulation in Zigzag ZnO Nanotubes: Role of Built-In Polarization Electric Field

Quantum Effects of Strain Influence on the Doping Energy in Semiconductors

Strain-induced Electronic Energy Changes in Multilayered InGaAs∕GaAs Quantum Wire Structures

Strain accumulation in InAs/In x Ga 1− x As quantum dots

Mesoscopic Elastic Distortions in GaAs Quantum Dot Heterostructures

Insight into Strain Effects on Band Alignment Shifts, Carrier Localization and Recombination Kinetics in Cdte/Cds Core/Shell Quantum Dots

Monolithically Integrated Microelectromechanical Systems for On-Chip Strain Engineering of Quantum Dots

Strain accumulation in InAs/InxGa1−xAs quantum dots

The Effects of A Stress Field and Chemical Diffusion on Electronic Behaviour in Inas/Gaas Quantum Dots

Conduction band structure and electron mobility in uniaxially strained Si via externally applied strain in nanomembranes

Lattice deformation at the sub-micron scale: X-ray nanobeam measurements of elastic strain in electron shuttling devices

Strain-induced Band-Gap Modulation in GaAs/AlGaAs Quantum-Well Structure Using Thin-Film Stressors

Strain engineering of the electronic states of silicon-based quantum emitters