Abstract:In this paper, we calculated the strain distribution of low dimension structure using the elastic continuum model in the first part we focused on the lens-shaped quantum dot, and discussed the strain distribution of the quantum dot with and without capping layer. In another section, we gave a detail analysis about the strain distribution for quantum wire and quantum dot intergrowth structure, and there are two situations: the first, a little bigger quantum dot grown within a single quantum wire, the second, Y shaped quantum wires where quantum dot grown in the cross section of the wires, and the angle of the Y shaped wires lessen than 12 degree. All the low-dimension structures discussed have been observed in the laboratory. For the lens-shaped quantum dot with and without capping layer, the results showed that in both circumstances, the strain distribution would become more uniform in the quantum dot if the transverse size becomes larger. Compared with the open quantum dot (without capping layer), the capping layered quantum dot has a more sufficient strain relaxation, and even excessive strain relaxation is observed in the simulation. This phenomenon can be used to qualitative explain the quantum dot cave in and cavern out in the sequential capping layer growth interruption observed in laboratory. It is very promising for the quantum wire and quantum dot intergrowth structure. The phenomena of photoluminescence spectrum not changing with the variation of temperature have been observed recently in the intergrowth structure. For convenience, we used a simplified model to calculate such a structure, which we adopted rectangle quantum wire and rectangle quantum dot. The growth is along the [001] direction, and the wire is along the [110] direction. The results showed that the strain in quantum dot is greatly enhanced in the intergrowth structure compared with the single quantum dot system. There are strain-focusing region around the interface of quantum dot and quantum wire.

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Finite element analysis of strain effects on electronic and transport properties in quantum dots and wires

Electronic Structure of Inasxp1-X/Inp Strained Quantum Wires

Strain Effects on Resonant Parameters in Asymmetric In1−xGaxAs Quantum Dot Molecules

Systematic study of Ga$_{1-x}$In$_x$As self-assembled quantum wires with different interfacial strain relaxation

The Influence Of Graded Inxga1-Xas On Strain Distribution And The Band Gap In The Inas/Gaas Quantum Dots

Investigation of the Elastic Strain Fields for Different Structure of Complex Self-Organized Low-Dimension Quantum Wire and Dot System

Difference of luminescent properties between strained InAsP/InP and strain-compensated InAsP/InGaAsP MQWs

Strain accumulation in InAs/In x Ga 1− x As quantum dots

Effects of microscopic strain distribution on Ga(1-x)In(x)As quantum wires grown by strain-induced lateral ordering

Strain Distribution and Electronic Structure of Self-Organized Inas/Gaas Quantum Dots

Strain Distribution and Electronic Structures of the InAs/GaAs Quantum Ring Molecule in an Applied Electric Field

Strain accumulation in InAs/InxGa1−xAs quantum dots

Effect of Wire Width on Strain Distribution and Bandgap in Quantum-Wire Nanostructures Based on Continuum Elasticity Theory

Influence of Strain-Reducing Layer on Strain Distribution of Self-Organized InAs/GaAs Quantum Dot and Redshift of Photoluminescence Wavelength

Strain Induced Quantum Effect in Semiconductors

Strain-confined Wires and Dots at a GaAs/AlxGa1-xAs Interface

Lateral and Vertical Ordered One-Dimensional Ingaas/Gaas Quantum Structures

Strain Engineered Band Structure and Optical Properties of Confined GaAs Quantum Dots

Band Engineering in Strained Gan/Ultrathin Inn/Gan Quantum Wells