Abstract:InxGa1-xAs/GaAs strained-layer structures containing four single quantum wells (SSQWs) were grown by molecular beam epitaxy on a (001) semi-insulating GaAs substrate with In contents of x = 0.09 and x = 0.16. The structures contained four InxGa1-xAs quantum wells with well width and growth sequence given by 20, 40, 80 and 160 angstrom and were separated by 500 angstrom GaAs layers. The optical and structural properties of the SSQW samples have been analysed by low-temperature cathodoluminescence (CL) and transmission electron microscopy. Misfit dislocations were observed in the sample with higher In content. Large-angle convergent-beam electron diffraction has been newly applied to this system as a reliable method for determining dislocation character. All misfit dislocations studied in plan-view specimens revealed dark line contrast in appropriately chosen monochromatic CL images irrespective of the dislocation character or its alpha or beta form. A simple one-to-one correlation between dislocations and dark lines was obtained. The very different well widths for InxGa1-xAs wells in the structures resulted in very different emission energies in CL experiments. It was therefore possible to deduce in which quantum well a particular dislocation segment lay by the energy of the monochromatic image which showed dark-line contrast. As a result, dislocations were traced stepping progressively from one well to another. It was also proved that most dislocations lay in the first-grown well although it was the narrowest. The implication of these results and potential applications of the experimental technique are discussed.

Lateral and Vertical Ordered One-Dimensional Ingaas/Gaas Quantum Structures

InxGa1-xSb/GaAs quantum well structures grown by molecular beam epitaxy

quantum well structures grown by molecular beam epitaxy

Systematic study of Ga$_{1-x}$In$_x$As self-assembled quantum wires with different interfacial strain relaxation

Strain-induced Electronic Energy Changes in Multilayered InGaAs∕GaAs Quantum Wire Structures

Ingaas/Gaas Three-Dimensionally-Ordered Array of Quantum Dots

Direct Observation of Above-Quantum-step Quasibound States Ingaas/alx

Effects of microscopic strain distribution on Ga(1-x)In(x)As quantum wires grown by strain-induced lateral ordering

Direct spectroscopic evidence for the formation of one-dimensional wetting wires during the growth of InGaAs/GaAs quantum dot chains.

Atomic Structures of Two-Dimensional Strained Inas Epitaxial Layers on A Gaas(001) Surface: in Situ Observation of Quantum Dot Growth

Growth and Optical Properties of Self-Assembled InGaAs Quantum Posts

PyramidalGaAs/AlzGa1−zAsquantum Wire/dot Systems with Controlled Heterostructure Potential

Structural And Optical Properties Of M-Plane Gan/Algan Quantum Wires Grown By Metalorganic Chemical Vapor Deposition

The Study of Misfit Dislocations in Inxga1-Xas/Gaas Strained Quantum-Well Structures

Integrated Fabrication Of A High Strain Ingaas/Gaas Quantum Well Structure Under Variable Temperature And Improvement Of Properties Using Mocvd Technology

Fabrication of InGaAs Quantum Dot 2D-Arrays on GaAs(001) by MBE

Structure and Optical Anisotropy of Vertically Correlated Submonolayer Inas/Gaas Quantum Dots

QUANTUM DOT OPTO-ELECTRONIC DEVICES

Band Engineering in Strained Gan/Ultrathin Inn/Gan Quantum Wells

Two-Dimensional In0.4ga0.6as/Gaas Quantum Dot Superlattices Realized by Self-Organized Epitaxial Growth

Fabrication Of Ingaas Quantum Dots With An Underlying Ingaalas Layer On Gaas(100) And High Index Substrates By Molecular Beam Epitaxy