Abstract:A systematic theoretical study of the electronic and optical properties of Ga$_{1-x}$In$_x$As self-assembled quantum-wires (QWR's) made of short-period superlattices (SPS) with strain-induced lateral ordering is presented. The theory is based on the effective bond-orbital model (EBOM) combined with a valence-force field (VFF) model. Valence-band anisotropy, band mixing, and effects due to local strain distribution at the atomistic level are all taken into account. Several structure models with varying degrees of alloy mixing for lateral modulation are considered. A valence force field model is used to find the equilibrium atomic positions in the QWR structure by minimizing the lattice energy. The strain tensor at each atomic (In or Ga) site is then obtained and included in the calculation of electronic states and optical properties. It is found that different local arrangement of atoms leads to very different strain distribution, which in turn alters the optical properties. In particular, we found that in model structures with thick capping layer the electron and hole are confined in the Ga-rich region and the optical anisotropy can be reversed due to the variation of lateral alloying mixing, while for model structures with thin capping layer the electron and hole are confined in the In-rich region, and the optical anisotropy is much less sensitive to the lateral alloy mixing.

Band Engineering in Strained Gan/Ultrathin Inn/Gan Quantum Wells

Strain-induced Band-Gap Modulation in GaAs/AlGaAs Quantum-Well Structure Using Thin-Film Stressors

Efficient band-structure calculations of strained quantum wells

Bandgaps and Band Offsets in Strain-Compensated Ingaas/Ingaasp Multiple Quantum Wells

Contrastive band gap engineering of strained graphyne nanoribbons with armchair and zigzag edges

Calculation of Band Structure of InGaAs/GaAs Strained Quantum Wells

Band Engineering Of Gan/Aln Quantum Wells By Si Dopants

Strain and external electric field modulation of the electronic and optical properties of GaN/WSe<sub>2</sub> vdWHs

Enhancement Of Electron-Longitudinal Optical Phonon Coupling In Highly Strained Ingan/Gan Quantum Well Structures

Intersubband Absorption in Strained Algan/Gan Double Quantum Wells

Investigation of quantum-confinement effect and Stokes shift in strained Ga1−xInxN/GaN double quantum wells by spectroscopic ellipsometry and photoluminescence

Study of Band Structure InxGa1−xN∕GaN Multiple Quantum Wells by High-Resolution Electron Microscopy and Electron Holography

Strain Effect on Intersubband Transition in a GaN/AlGaN Single Quantum Well on Arbitrary Crystal Planes

Strain-induced Electronic Energy Changes in Multilayered InGaAs∕GaAs Quantum Wire Structures

Polarization effects on quantum levels in InN/GaN quantum wells.

Effect Of Critical Thickness On Structural And Optical Properties Of Inxga1-Xn/Gan Multiple Quantum Wells

Systematic study of Ga$_{1-x}$In$_x$As self-assembled quantum wires with different interfacial strain relaxation

Effects of inhomogeneous strain of quantum-well structures on the band-structure and gain

Strain and external electric field modulation of the electronic and optical properties of GaN/WSe2 vdWHs

Effects of microscopic strain distribution on Ga(1-x)In(x)As quantum wires grown by strain-induced lateral ordering

Micro Characteristics of InGaN/GaN Quantum Wells