Abstract:Abstract Two-dimensional lateral heterostructures (LHSs) carry unconventional physical properties due to their excellent adjustable band-offset and sensitive interface characteristics. In this paper, we have designed two kinds of seamless LHSs with excellent stabilities, the zigzag-zigzag (Z-Z) InP/InAs LHS and the armchair-armchair (A-A) InP/InAs LHS, and the changes in lattice structures and electronic properties under different strains are studied systematically by employing first-principles calculations based on density functional theory. Our results indicate that the Z-Z and A-A InP/InAs LHSs are indirect-bandgap semiconductors with a moderate bandgap. Surprisingly, it is found that the carrier mobility of holes for the Z-Z InP/InAs LHS is as high as 6.954 × 10 3 cm 2 · V −1 · s −1 . The established Z-Z and A-A InP/InAs LHSs exhibit superior properties under uniaxial strains ( a -direction and b -direction) and biaxial strain ( ab -direction). It is found that the conduction bands of Z-Z and A-A InP/InAs LHSs occur with an intriguing downward (upward) transfer under compressive (tensile) strain along the b- and ab -directions, respectively. Moreover, when more than 2% of the tensile strain along the ab -direction is applied, the Z-Z and A-A InP/InAs LHS change from an indirect bandgap semiconductor to a direct bandgap semiconductor, and the Z-Z InAs/InP LHS changes into type-II heterostructure. Based on the calculated band structures, the effect of uniaxial strain on effective mass is anisotropic. Especially when tensile strain is applied, the effective mass of electrons in Z-Z and A-A InP/InAs LHSs will be reduced, which is consistent with the change in band structures under strain. The strain tunability of direct bandgap, type-II band alignment, and high carrier mobility mean Z-Z and A-A InP/InAs LHSs have potential applications in optoelectronic, photovoltaic, and flexible electronic devices.

Efficient band-structure calculations of strained quantum wells

Electric fields and valence band offsets at strained [111] heterojunctions

Spin-orbit-coupling effects on the valence-band structure of strained semiconductor quantum wells

Effective-mass Theory for InAs/GaAs Strained Coupled Quantum Dots.

A band-structure model of strained quantum-well wurtzite semiconductors

Bandgaps and Band Offsets in Strain-Compensated Ingaas/Ingaasp Multiple Quantum Wells

Analytic model for the valence-band structure of a strained quantum well

Effects of microscopic strain distribution on Ga(1-x)In(x)As quantum wires grown by strain-induced lateral ordering

Systematic study of Ga$_{1-x}$In$_x$As self-assembled quantum wires with different interfacial strain relaxation

Tunable strain effects on the electronic structures and mobility properties of InP/InAs lateral heterostructure

Valence band structure calculations of strained Ge$_{1-x}$Sn$_x$ quantum well pFETs

Theoretical analysis of band structure and material gain of InGaAs quantum wells in a semiconductor disk laser

Difference of luminescent properties between strained InAsP/InP and strain-compensated InAsP/InGaAsP MQWs

Ab initio calculation of band edges modified by (001) biaxial strain in group IIIA–VA and group IIB–VIA semiconductors: Application to quasiparticle energy levels of strained InAs/InP quantum dot

Calculation of the valence band structure in strained In 0.7Ga0.3As devices with different surface orientation

Effects of inhomogeneous strain of quantum-well structures on the band-structure and gain

Study of Band Structure InxGa1−xN∕GaN Multiple Quantum Wells by High-Resolution Electron Microscopy and Electron Holography

Uniaxial strain effect on the electronic and optical properties of wurtzite GaN-AlGaN quantum-well lasers

Inversion Asymmetry, Hole Mixing, and Enhanced Pockels Effect in Quantum Wells and Superlattices.

Electronic and hole minibands in quantum wire arrays of different crystallographic structure