Abstract:A systematic theoretical study of the electronic and optical properties of Ga$_{1-x}$In$_x$As self-assembled quantum-wires (QWR's) made of short-period superlattices (SPS) with strain-induced lateral ordering is presented. The theory is based on the effective bond-orbital model (EBOM) combined with a valence-force field (VFF) model. Valence-band anisotropy, band mixing, and effects due to local strain distribution at the atomistic level are all taken into account. Several structure models with varying degrees of alloy mixing for lateral modulation are considered. A valence force field model is used to find the equilibrium atomic positions in the QWR structure by minimizing the lattice energy. The strain tensor at each atomic (In or Ga) site is then obtained and included in the calculation of electronic states and optical properties. It is found that different local arrangement of atoms leads to very different strain distribution, which in turn alters the optical properties. In particular, we found that in model structures with thick capping layer the electron and hole are confined in the Ga-rich region and the optical anisotropy can be reversed due to the variation of lateral alloying mixing, while for model structures with thin capping layer the electron and hole are confined in the In-rich region, and the optical anisotropy is much less sensitive to the lateral alloy mixing.

Analytic model for the valence-band structure of a strained quantum well

Efficient band-structure calculations of strained quantum wells

Effective Well Width Analysis in Quantum Well Struct ures

Electric fields and valence band offsets at strained [111] heterojunctions

A band-structure model of strained quantum-well wurtzite semiconductors

Gain characteristics of Ga1-xInxAs/GaInAsP/InP tensile-strained quantum well

Valence band structure calculations of strained Ge$_{1-x}$Sn$_x$ quantum well pFETs

Characteristic Analysis Of Ingaas/Ingaasp Strained Quantum Well Lasers

Bandgaps and Band Offsets in Strain-Compensated Ingaas/Ingaasp Multiple Quantum Wells

Model for the on-site matrix elements of the tight-binding hamiltonian of a strained crystal: Application to silicon, germanium and their alloys

Analysis and optimization of 1.55 μm InGaAs/InGaAsP strained multiple quantum well lasers

Systematic study of Ga$_{1-x}$In$_x$As self-assembled quantum wires with different interfacial strain relaxation

Strain-assisted Spin Manipulation in a Quantum Well

A Fully Verified Theoretical Analysis Of Strain-Photonic Coupling For Quantum Wells Embedded In Wavy Nanoribbons

Linear and Nonlinear Intersubband Optical Absorption in A Strained Double Barrier Quantum Well

Analysis of coupling effect on valence band structures of strained multiple quantum wells

Effects of microscopic strain distribution on Ga(1-x)In(x)As quantum wires grown by strain-induced lateral ordering

Effects of inhomogeneous strain of quantum-well structures on the band-structure and gain

Effect of Valence-Band Hybridization on the Exciton Spectra in Gaas-Ga1-Xalxas Quantum-Wells

Spin-orbit-coupling effects on the valence-band structure of strained semiconductor quantum wells

Strain Induced Quantum Effect in Semiconductors