Abstract:Lattice mismatch in epitaxial layered heterostructures with small characteristic lengths induces large, spatially nonuniform strains. The components of the strain tensor have been shown experimentally to affect the electronic properties of semiconductor structures. Here, a technique is presented for calculating the influence of strain on electronic properties. First, the linear elastic strain in a quantum dot or wire is determined by a finite element calculation. A strain-induced potential field that shifts and couples the valence subbands in the structure is then determined from deformation potential theory. The time-independent Schrödinger equation, including the nonuniform strain-induced potential and a potential due to the heterostructure layers, is then solved, also by means of the finite element method. The solution consists of the wave functions and energies of states confined to the active region of the structure; these are the features which govern the electronic and transport properties of devices. As examples, two SixGe1−x submicron resonant tunneling devices, a quantum wire with two-dimensional confinement and a quantum dot with three-dimensional confinement, are analyzed. Experimentally measured resonant tunneling current peaks corresponding to the valence subbands in the material are modeled by generating densities of confined states in the structures. Size and composition-dependent strain effects are examined for both devices. In both the quantum dot and the quantum wire, the strain effects on the wave functions and energies of confined states are evident in the calculated densities of confined states in the structures, which are found to be consistent with experimentally measured tunneling current/voltage curves for resonant tunneling diodes.

Model for the on-site matrix elements of the tight-binding hamiltonian of a strained crystal: Application to silicon, germanium and their alloys

Calculation of Elastic Strain Fields for Single Ge/Si Quantum Dots

Electric fields and valence band offsets at strained [111] heterojunctions

Study of strain distribution in GeSi/Si strained heterostructure

Tight-binding Study of the Strained Monolayer Superlattices (si)1/(si1−xgex)1 (100)

Impact of Inhomogeneous Strain on the Valence Band Structures of Ge-Si Core-Shell Nanowires

Effective mass anomalies in strained Si thin films and crystals

Strain-induced structure transformations on Si(111) and Ge(111) surfaces: a combined density-functional and scannning tunnneling microscopy report

Strain Relaxation Mechanisms and Local Structural Changes in Si_{1-x}$Ge_{x} Alloys

A band-structure model of strained quantum-well wurtzite semiconductors

Strain Induced Quantum Effect in Semiconductors

Constitutive modeling of some 2D crystals: graphene, hexagonal BN, MoS$_2$, WSe$_2$ and NbSe$_2$

Bandstructures of unstrained and strained silicon nanowire

Matrix description of dynamical HOLZ diffraction tested on the strained layer superlattice Si/GeSi

First Principles Simulations of Nanoscale Silicon Devices with Uniaxial Strain

Finite element analysis of strain effects on electronic and transport properties in quantum dots and wires

Electronic charge distribution in crystalline diamond, silicon, and germanium

Analytic model for the valence-band structure of a strained quantum well

Interplay of quantum confinement and strain effects in type I to type II transition in Ge/Si core-shell nanocrystals

Conduction band structure and electron mobility in uniaxially strained Si via externally applied strain in nanomembranes

Phonon and Raman spectra: effect of interface diffusion of strained Si/Ge superlattices