Abstract:Lattice mismatch in epitaxial layered heterostructures with small characteristic lengths induces large, spatially nonuniform strains. The components of the strain tensor have been shown experimentally to affect the electronic properties of semiconductor structures. Here, a technique is presented for calculating the influence of strain on electronic properties. First, the linear elastic strain in a quantum dot or wire is determined by a finite element calculation. A strain-induced potential field that shifts and couples the valence subbands in the structure is then determined from deformation potential theory. The time-independent Schrödinger equation, including the nonuniform strain-induced potential and a potential due to the heterostructure layers, is then solved, also by means of the finite element method. The solution consists of the wave functions and energies of states confined to the active region of the structure; these are the features which govern the electronic and transport properties of devices. As examples, two SixGe1−x submicron resonant tunneling devices, a quantum wire with two-dimensional confinement and a quantum dot with three-dimensional confinement, are analyzed. Experimentally measured resonant tunneling current peaks corresponding to the valence subbands in the material are modeled by generating densities of confined states in the structures. Size and composition-dependent strain effects are examined for both devices. In both the quantum dot and the quantum wire, the strain effects on the wave functions and energies of confined states are evident in the calculated densities of confined states in the structures, which are found to be consistent with experimentally measured tunneling current/voltage curves for resonant tunneling diodes.

Effective mass anomalies in strained Si thin films and crystals

Atomistic Investigations of Single-Crystal Silicon with Pre-Existing Defects

Optimization of effective electron mass in strained silicon nanosheets

Optical anisotropy and strain-induced birefringence in dislocation-free silicon single crystals

Influence of strain on the conduction band structure of strained silicon nanomembranes

Conduction band structure and electron mobility in uniaxially strained Si via externally applied strain in nanomembranes

Effect of Mechanical Strain on the Optical Properties of Nodal‐Line Semimetal ZrSiS

Model for the on-site matrix elements of the tight-binding hamiltonian of a strained crystal: Application to silicon, germanium and their alloys

Ab-initio Study of Size and Strain Effects on the Electronic Properties of Si Nanowires

Bandstructures of unstrained and strained silicon nanowire

Strain-induced structure transformations on Si(111) and Ge(111) surfaces: a combined density-functional and scannning tunnneling microscopy report

Relationships Between Strain and Band Structure in Si(001) and Si(110) Nanomembranes

Strain Relaxation Mechanisms and Local Structural Changes in Si_{1-x}$Ge_{x} Alloys

Anomalous tension–compression asymmetry in amorphous silicon: insights from atomistic simulations and elastoplastic constitutive modeling

Two-Dimensional Wigner Crystal in Anisotropic Semiconductor

Impacts of size and cross-sectional shape on surface lattice constant and electron effective mass of silicon nanowires

First Principles Simulations of Nanoscale Silicon Devices with Uniaxial Strain

Analysis of Strain Fields in Silicon Nanocrystals

Experimental Analyses on Multiscale Structural and Mechanical Properties of Ε-Si/gesi/c-si Materials

Finite element analysis of strain effects on electronic and transport properties in quantum dots and wires

Measurement of effective electron mass in biaxial tensile strained silicon on insulator