Abstract:The lattice quality of strain superlattice structures in Quantum Cascade Lasers (QCLs) directly influences the photoelectric properties and service life of the lasers. However, the evaluation method for lattice quality on the nanoscale is not very well developed at present, especially for interface lattice quality assessment. In this investigation, all atoms positioned in the multiple interface layers can be simultaneously and accurately determined through Subset Geometric Phase Analysis (S-GPA) combined with a Peak Finding (PF) method and an Optimal Approximation Algorithm (OAA) with a sensitivity of about 0.04 Å. Based on the determined interface location, the strain distribution in all layers of the superlattice structure was simultaneously measured using the improved S-GPA by means of the optimal selection of multiple reference areas. A quantitative evaluation of the strain/stress compensation effect was then carried out based on the theoretical model of elastic mechanics. The proposed method was successfully applied to evaluating the lattice quality of an In0.6Ga0.4As/In0.44Al0.56As superlattice structure grown by Molecular Beam Epitaxy (MBE). The obtained results show that the interface lattices are almost perfect with a uniform thickness of layers, without any defects and stress concentration. Each In0.44Al0.56As layer and adjacent In0.6Ga0.4As layers provided effective strain/stress compensation for each other, reducing the possibility of forming dislocations. In one period, the active region has been properly strain-balanced to give a nearly net zero strain. The proposed method can not only be applied in evaluating the growth quality of the superlattice structure with a large field of view, but also provide quantitative experimental data for further improving the superlattice design.

Matrix description of dynamical HOLZ diffraction tested on the strained layer superlattice Si/GeSi

Tight-binding Study of the Strained Monolayer Superlattices (si)1/(si1−xgex)1 (100)

LACBED determination of structure factors and alloy composition of GeSi/Si SLS

Lattice-Dynamics Of Strained Si/Ge Superlattices

Many-beam Simulations and Observations of Large-Angle Convergent-Beam Electron Diffraction Imaging of Crystal Defects

Raman-Scattering Spectroscopy of Gesi/Si Strained-Layer Superlattice

Investigation of Strain and Thin Film Relaxation in GexSi1−x/Si Strained-Layer Superlattice by Dark-Field Electron Holography

Electronic-Structures of Strained-Layer Superlattices (Si)2n/(si1-Xgex)2n(100) with N=1-10

Investigation of strain and thin film relaxation in Ge xSi 1-x/Si strained-layer superlattice by dark-field electron holography

The Structure of GexSi1−x/Si Strained Layer Superlattices and Heterostructures

Theoretical Study of Structures and Growth of Strained Si/Ge Superlattices

Calculation Of Critical Layer Thickness Considering Thermal Strain In Si1-Xgex/Si Strained-Layer Heterostructures

Depth profiles of the interfacial strains of Si 0.7 Ge 0.3 /Si using three-beam Bragg-surface diffraction

Model for the on-site matrix elements of the tight-binding hamiltonian of a strained crystal: Application to silicon, germanium and their alloys

BAND STRUCTURE OF Si/Ge STRAINED LAYER SUPERLATTICE

Quantitative Evaluation of the Interface Lattice Quality of a Strain Superlattice by Strain Analysis.

Local Lattice Distortion of Ge-Dilute Ge-Si Alloy: Multiple-Scattering Exafs Study

Structural stability of SiGe/Si strained-layer superlattices

Electronic Structures of Strained Layer Superlattices (Si)m/(Si1-xGex)m(100) with m=1 and m=2n (n=1-10)

SMALL-ANGLE X-RAY DIFFRACTION ANALYSIS OF GexSi1-x/Si SUPERLATTICE

Strain Relaxation and Misfit Dislocation in SiGe Epilayers Grown in Micron Size Windows by MBE