Abstract:The GexSi1-x/Si superlattice with 23 periods was grown by molecular beam epitaxy. The X-ray diffraction pattern was measured using a computer-controlled X-ray diffractometer with Cu Ka radiation. Interference peaks due to the superlattice structure were observed up to the 13th order. The superlattice period and the Ge average composition can be determined from the interference peak angles based on a modified Bragg's law, which was derived by including the X-ray refraction at the superlattice surface and interfaces. The structural parameter can be determined by analyzing the X-ray diffraction pattern based on the optical multilayer reflection theory. The intensity ratio of the 2nd peak to the 1st peak is quite sensitive to the variation of the thickness ratio of the two components. By comparing the calculated value of I2/I1 to the experiment, we can determine the thicknesses of Si and GexSi1-x layers, and finallv x. The diffraction pattern calculated using the optical mutilayer reflection theory was in accordance with the measured ones.

LACBED determination of structure factors and alloy composition of GeSi/Si SLS

Matrix description of dynamical HOLZ diffraction tested on the strained layer superlattice Si/GeSi

Raman-Scattering Spectroscopy of Gesi/Si Strained-Layer Superlattice

Many-beam Simulations and Observations of Large-Angle Convergent-Beam Electron Diffraction Imaging of Crystal Defects

SMALL-ANGLE X-RAY DIFFRACTION ANALYSIS OF GexSi1-x/Si SUPERLATTICE

Tight-binding Study of the Strained Monolayer Superlattices (si)1/(si1−xgex)1 (100)

Ellipsometric Properties of GexSi1−x Superlattices

Intensity Modulation of Glancing Angle X-Ray Diffraction Spectra of GexSi1−x/Si Superlattices

Large and small angle x-ray scattering studies of Si/SiGe superlattices grown by gas-source molecular beam epitaxy

Electronic-Structures of Strained-Layer Superlattices (Si)2n/(si1-Xgex)2n(100) with N=1-10

Theoretical Study of Structures and Growth of Strained Si/Ge Superlattices

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Intensity Modulation of Glancing Angle X-Ray Diffraction Spectra of Ge<sub>x</sub>Si<sub>1−x</sub>/Si Superlattices

Local Structures of (ge4/si4)5 Monolayer Strained-Layer Supperlattice Probed by Fluorescence XAFS

The Structure of GexSi1−x/Si Strained Layer Superlattices and Heterostructures

Ellipsometry studies of Si/Ge superlattices with embedded Ge dots

Local Lattice Distortion of Ge-Dilute Ge-Si Alloy: Multiple-Scattering Exafs Study

Order Alloy in Ge X Si 1- X /si(100) Strained-Layer Superlattices

Direct in situ characterization of Ge surface segregation in strained Si1−xGex epitaxial thin films

Lattice-Dynamics Of Strained Si/Ge Superlattices

Studying the Lateral Composition in Ge Quantum Dots on Si(001) by Conductive Atomic Force Microscopy