Abstract:Ge/SiGe multi-quantum well heterostructures are highly sought-after for silicon-integrated optoelectronic devices operating in the broad range of the electromagnetic spectrum covering infrared to terahertz wavelengths. However, the epitaxial growth of these heterostructures at a thickness of a few micrometers has been a challenging task due to the lattice mismatch and its associated instabilities resulting from the formation of growth defects. To elucidate these limits, we outline herein a process for the strain-balanced growth on silicon of 11.1/21.5 nm Ge/Si 0.18 Ge 0.82 superlattices (SLs) with a total thickness of 16 μ m corresponding to 500 periods. Composition, thickness, and interface width are preserved across the entire SL heterostructure, which is an indication of limited Si–Ge intermixing. High crystallinity and low defect density are obtained in the Ge/Si 0.18 Ge 0.82 layers; however, the dislocation pileup at the interface with the growth substrate induces micrometer-long cracks on the surface. This eventually leads to significant layer tilt in the strain-balanced SL and in the formation of millimeter-long, free-standing flakes. These results confirm the local uniformity of structural properties and highlight the critical importance of threading dislocations in shaping the wafer-level stability of thick multi-quantum well heterostructures required to implement effective silicon-compatible Ge/SiGe photonic devices.

Ellipsometry studies of Si/Ge superlattices with embedded Ge dots

Optical properties of Ge/Si quantum dot superlattices

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Study of Crystallization and Phase Mixing in Sio2/Siox Superlattices Through Form Birefringence Measurements

Ellipsometric Properties of GexSi1−x Superlattices

Large and small angle x-ray scattering studies of Si/SiGe superlattices grown by gas-source molecular beam epitaxy

Raman-Scattering Spectroscopy of Gesi/Si Strained-Layer Superlattice

Intensity Modulation of Glancing Angle X-Ray Diffraction Spectra of Ge<sub>x</sub>Si<sub>1−x</sub>/Si Superlattices

Light Scattering by Superlattice Acoustic Modes at Critical Points of the Brillouin Zone

Optical Second Harmonic Generation Studies of Epitaxial Growth of Si and SiGe

Microstructures of Ge/Si Superlattices Growth at Low Temperature

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

500-period epitaxial Ge/Si0.18Ge0.82 multi-quantum wells on silicon

Nanoheteroepitaxy of Ge and SiGe on Si: role of composition and capping on quantum dot photoluminescence

Defect studies in strain-relaxed Si$_{1-x}$Ge$_x$ alloys

SMALL-ANGLE X-RAY DIFFRACTION ANALYSIS OF GexSi1-x/Si SUPERLATTICE

Intensity Modulation of Glancing Angle X-Ray Diffraction Spectra of GexSi1−x/Si Superlattices

Study of Ge Thin Heterostructures by Synchrotron Radiation X-Ray Reflection

Vibrational properties of Si/Ge superlattices

Mcrostructure and Optical Properties of Ge(Si) Dots Grown on Si

Vibrational Properties of Si/Ge and Α-Sn/ge Superlattices with Intermixed Interfaces