Abstract:Reflectance anisotropy (RA) and reflection high energy electron diffraction (RHEED) were used simultaneously to study the growth of Si and SiGe on Si(001) surfaces by gas-source molecular beam epitaxy (GSMBE). These surfaces are dimerised and have a domain structure created by the orthogonal alignment of dimers on terraces separated in height by a04. Comparison between the RA and RHEED measurements reveals the origin of dynamic changes in the RA response to be the periodic changes in domain coverages on singular surfaces caused by growth under a monolayer-by-monolayer mode. It also demonstrates that RA is a more direct measure of domain coverage variations on the Si(001) surface compared with RHEED, which may suffer from effects of ordering and multiple scattering. The RA technique is used to investigate domain coverage variations as a function of temperature and following growth interruption. It is shown that there is no significant change in the domain coverage at 600°C during growth interruption, consistent with Monte Carlo simulation. This is despite the occurrence of migration of adatoms/islands as indicated by the recovery of specular beam intensity during simultaneous RHEED measurements. The temperature dependence of the dynamic change in RA response is interpreted as a growth mode change at high temperatures and change in the electronic configuration of the dimers due to chemisorbed hydrogen at low temperatures. The changes in the RA response during deposition of SiGe are also investigated as a function of Ge concentration at 600°C growth temperature.

Study of Ge Thin Heterostructures by Synchrotron Radiation X-Ray Reflection

A Study of Rheed Pattern from the Epitaxial Growth of Si-Ge Crystal

Study of Si and Ge growth on Si(100) surface

Study of Semiconductor Super Thin Heterostructures with Synchrotron Radiation X-Ray Standing Wave Technique

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

Ge Migration Effect of Si/Ge-N/Si(100) Heterostructure Films Probed by Grazing Incidence Fluorescence X-Ray Absorption Fine Structure

Large and small angle x-ray scattering studies of Si/SiGe superlattices grown by gas-source molecular beam epitaxy

Direct in situ characterization of Ge surface segregation in strained Si1−xGex epitaxial thin films

Microstructures of Ge/Si Superlattices Growth at Low Temperature

Intensity Modulation of Glancing Angle X-Ray Diffraction Spectra of Ge<sub>x</sub>Si<sub>1−x</sub>/Si Superlattices

An X-ray Scattering Study on Inverted Ge–Si Huts Grown at Low Temperatures

X-Ray Reflectivity Measurement Of Delta-Doped Erbium Profile In Silicon Molecular-Beam Epitaxial Layer

Growth of Ge-Si strained layers and DC XRD study on epitaxial films

RHEED and SIMS studies of germanium segregation during growth of SiGe/Si heterostructures; a two-site exchange model with growth rate dependence

A Stem Study of P and Ge Segregation to Grain Boundaries in Si 1-x Ge x Thin Films

In-situ Monitoring of Si and SiGe Growth on Si(001) Surfaces During Gas-Source Molecular Beam Epitaxy Using Reflectance Anisotropy

Multitechnique characterization of sandwiched Si/SiGe/Si heterostructures

Influence of Sb as surfactant on Ge epitaxial growth on Si(001)

Strain Relaxation and Misfit Dislocation in SiGe Epilayers Grown in Micron Size Windows by MBE

Study on silicon molecular beam epitaxial layer morphology by scanning tunneling microscopy

Critical Ge concentration for 2×n reconstruction appearing on GeSi covered Si(100)