Abstract:NiSi1-xGex films on compressively strained as well as relaxed undoped Si1-xGex epitaxially grown substrates with x=0.06-0.30 on Si(001) wafers have been studied with respect to the relative orientation of film and substrate after annealing at temperatures in the range 400-850 degreesC. Using x-ray diffraction, transmission electron microscopy, and pole-figure measurements, it was found that only the monogermanosilicide phase formed above 450 degreesC and was the only phase still at 850 degreesC. New information regarding the effects of Ge on the silicidation of Ni was also found. Thus, the preferred plane parallel to the surface is (013). Compared to NiSi, Ge suppresses the development of the other planes parallel to the surface except (013). Within this plane, the orientations of the grains pile up in such a way that the configuration NiSi1-xGex[100]//Si1-xGex[100] is avoided, which in the pole-figures leads to broad peaks in-between the substrate [100] and [010]. In addition, peaks indicating the epitaxial alignment NiSi0.8Ge0.2(+/-21-1) or (+/-2-11)//Si0.8Ge0.2(+/-2+/-20) coupled with NiSi0.8Ge0.2(+/-100)approximate to//Si0.8Ge0.2(+/-100) or (0+/-10) were found. Fine structure in the broad peaks is found to be due to lateral epitaxial alignments between grains along their common grain boundary. Based on the nonexistence of NiGe2, the observations are interpreted in terms of Ge preventing the formation of certain Ni-Ge bonds at the interface between NiSi1-xGex and the Si1-xGex substrate.

Influence of Sb as surfactant on Ge epitaxial growth on Si(001)

Effect of Sb as a surfactant on the inner diffusion of epilayer Ge atoms into Si substrate

Surfactant Influence on the Ge Heteroepilayer on Si(0 0 1) Studied by X-ray Diffraction and Atomic Force Microscopy

SURFACTANT EFFECT ON THE STRUCTURE OF THIN Ge HETEROEPILAYERS STUDIED BY X-RAY DIFFRACTION

Study of Si and Ge growth on Si(100) surface

Dimer-breaking-assisted Exchange Mechanism in Surfactant-Mediated Epitaxial Growth of Ge on Si(001):Ab Initiototal Energy Calculations

Growth of Ge-Si strained layers and DC XRD study on epitaxial films

Effects of Growth Temperature of Si Buffer Layer on Structure and Composition in Gesi Epitaxy Layers on Si Wafer

Single Adatom Site Exchange During the Ge Growth on Group V Element Covered Si(001)

Heteroepitaxial Growth of Ge Films on Si Substrates by Molecular-Beam Epitaxy

Strong surface segregation of Sb atoms at low temperatures during Si molecular beam epitaxy

Epitaxial GaSb films directly grown on on-axis Si(001) with low defect density by MBE

Crystalline Quality of Si Epilayers Influenced by Sb Doping

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

Tensile-strained Ge 1− x Sn x layers on Si(001) substrate by solid phase epitaxy featuring seed layer introduction

Adsorption, Diffusion, And Site Exchange For Ge Ad-Dimers On Sb-Covered Si(001) From First-Principles Total-Energy Calculations

The difference between Si and Ge(001) surfaces in the initial stages of growth

Molecular Beam Epitaxy and Micro-Structural Characterizations for PbSe Single Crystal Films

Study of Ge Thin Heterostructures by Synchrotron Radiation X-Ray Reflection

Co-evaporative Sb doping and crystalline quality in Si molecular beam epitaxy

Germanium-Induced Texture And Preferential Orientation Of Nisi1-Xgex Layers On Si1-Xgex