Abstract:The mechanical properties of Czochralski (Cz) silicon wafers dictate fundamental limits on the fabrication of diverse electronic devices. Certain impurities with sufficiently high concentrations may affect the mechanical properties of Cz silicon. The underlying mechanisms for such influences have been being explored in the past decades. In this work, the effects of antimony (Sb)- and tin (Sn)-doping at 1018 cm−3 level on the mechanical properties of Czochralski (Cz) silicon have been comparatively investigated. Since Sb and Sn have quite close tetrahedral covalent radii in silicon, the lattice strains resulted from Sb- and Sn-doping and their consequent effects on the mechanical properties of silicon are approximately identical. In silicon, Sb is an electrically active impurity while Sn is a neutral one. Therefore, the present work can essentially reveal the role of electrical activity of Sb playing in the mechanical properties of Cz silicon. It is found that Sb-doped Cz (Sb-Cz) silicon possesses a slightly higher hardness than Sn-doped Cz (Sn-Cz) silicon. Moreover, the dislocation gliding at 500 or 600 °C in Sb-Cz silicon requires a much larger critical resolved shear stress than that in Sn-Cz silicon. At such two temperatures, Sb-Cz silicon remains to be n-type in electrical conduction. The aforementioned two results are believed to be ascribed to the resistance of dislocation motion by the Coulomb interaction between the positively charged Sb ions and the dislocations that are deep-level acceptors thus being negatively charged in Sb-Cz silicon. As the temperature is increased to 700 °C and above, the dislocation gliding in Sb-Cz silicon is not substantially different from that in Sn-Cz silicon. At such elevated temperatures, Sb-Cz silicon becomes intrinsic in electrical conduction like Sn-Cz silicon. In this context, there is no Coulomb interaction between Sb ions and dislocations anymore to impede the dislocation gliding in Sb-Cz silicon. In addition, it is found that the indentation fracture toughness of Sb-Cz is almost the same as that of Sn-Cz silicon. Actually, the fracture of silicon is essentially a cleavage process, to which the electrical activity of Sb is irrelevant.

Co-evaporative Sb doping and crystalline quality in Si molecular beam epitaxy

Crystalline Quality of Si Epilayers Influenced by Sb Doping

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

Strong surface segregation of Sb atoms at low temperatures during Si molecular beam epitaxy

The distribution of Sb atoms in delta-doped silicon crystal

Study on the effects of Si-doping in molecular beam heteroepitaxial β-Ga2O3 films

Low-Temperature Epitaxy Of Zno Films On Si(001) And Silica By Reactive E-Beam Evaporation

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Molecular Beam Epitaxy and Micro-Structural Characterizations for PbSe Single Crystal Films

Doping And Growth Of Thin Si Epilayer And Sige By Uhv/Cvd

Effects of Antimony- and Tin-Doping on the Mechanical Propertiesof Czochralski Silicon: Revealing the Role of Electrical Activity of Antimony

Rate-Dependent Evolution of Microstructure and Stress in Silicon Films Deposited by Electron Beam Evaporation

X ray diffraction study of heavily boron doped Si epilayer after rapid thermal annealing

Growth of 3C–SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000°C

Extremely Narrow Sb Delta-Doped Epitaxial Layer Characterized by X-Ray Reflectivity

Investigation of Si incorporation in (010) β-Ga2O3 films grown by plasma-assisted MBE using diluted disilane as Si source and suboxide Ga2O precursor

THE DISTRIBUTION OF Sb ATOMS IN δ—DOPED SILICON CRYSTAL

Impacts of Doping on Epitaxial Germanium Thin Film Quality and Si-Ge Interdiffusion

Depth Profile of Delta-doped Semiconductors by X-Ray Reflection Technique

High concentration erbium doping of silicon-rich SiO2 thin films on silicon

Influence of Sb as surfactant on Ge epitaxial growth on Si(001)