Abstract:As of today, highly germanium doped Czochralski silicon crystals are used in applications. However, it is not clear how a germanium content in the range of 10(18) atoms/cm(3) influences the oxygen precipitation behavior, which is highly relevant for the gettering potential of the wafer. In this context, high energy X-ray diffraction is a promising tool to monitor real-time the strain introduced by the oxygen agglomeration and growth. Nevertheless, in particular, in the dynamical limit of X-ray diffraction and at elevated temperatures, the strain originating from the precipitation process has to be clearly distinguished from the intensity contribution of thermal vibrations. In Laue geometry, dynamical effects can even lead to an increment of the integrated intensity with temperature completely unexpected in the kinematical limit, where temperature is tackled solely by a Debye-Waller factor. In the following, an approach is presented allowing us to completely correct the influence of thermal vibrations in the dynamical limit. This approach is applied to undoped and highly germanium doped silicon crystals, clearly revealing an enhanced inventory of grown-in precipitates with germanium doping and suggesting a morphological transformation towards a phase of higher strain of the grown-in precipitates in the range between room temperature and 800 degrees C. Published by AIP Publishing.

The distribution of Sb atoms in delta-doped silicon crystal

THE DISTRIBUTION OF Sb ATOMS IN δ—DOPED SILICON CRYSTAL

Extremely Narrow Sb Delta-Doped Epitaxial Layer Characterized by X-Ray Reflectivity

Co-evaporative Sb doping and crystalline quality in Si molecular beam epitaxy

Strong surface segregation of Sb atoms at low temperatures during Si molecular beam epitaxy

Depth Profile of Delta-doped Semiconductors by X-Ray Reflection Technique

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

Crystalline Quality of Si Epilayers Influenced by Sb Doping

X-Ray Reflectivity Measurement Of Delta-Doped Erbium Profile In Silicon Molecular-Beam Epitaxial Layer

Sample Thickness Effect Of Thermal Vibration Correction Within X-Ray Dynamical Theory For Germanium-Doped Silicon

Theoretical and Experimental Development of Advanced Dopant-Sensitive Systems

The Location and Doping Effect of Boron in Si Nanocrystals Embedded Silicon Oxide Film

Growth and Characterization of Boron Delta-Function Shaped Doping Layer in Silicon by Molecular Beam Epitaxy

Study on the oxygen concentration reduction in heavily Sb-doped silicon

Electrical and Optical Properties of Boron‐doped Nanocrystalline Silicon Films Deposited by PECVD

Density Functional Theory Study on the B Doping and B/P Codoping of Si Nanocrystals Embedded in SiO2

Study of Ge Thin Heterostructures by Synchrotron Radiation X-Ray Reflection

Suppression of Interfacial Boron Accumulation and Defect Density in Molecular Beam Epitaxial Silicon

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Excitonic Line Broadening in Pbsrse Thin Films Grown by Molecular Beam Epitaxy

Investigation of Microstructure and Photoelectric Properties of Boron- Doped Amorphous Silicon Films