Abstract:The oxidation-related issues in controlling Si doping from the Si source material in oxide molecular beam epitaxy (MBE) is addressed by using solid SiO as an alternative source material in a conventional effusion cell. Line-of-sight quadrupole mass spectrometry of the direct SiO-flux ($\Phi_{SiO}$) from the source at different temperatures ($T_{SiO}$) confirmed SiO molecules to sublime with an activation energy of 3.3eV. The $T_{SiO}$-dependent $\Phi_{SiO}$ was measured in vacuum before and after subjecting the source material to an O$_{2}$-background of $10^{-5}$ mbar (typical oxide MBE regime). The absence of a significant $\Phi_{SiO}$ difference indicates negligible source oxidation in molecular O$_{2}$. Mounted in an oxygen plasma-assisted MBE, Si-doped $\beta$-Ga2O3 layers were grown using this source. The $\Phi_{SiO}$ at the substrate was evaluated [from 2.9x10$^{9}$ cm$^{-2}$s$^{-1}$ ($T_{SiO}$=700°C) to 5.5x10$^{13}$ cm$^{-2}$s$^{-1}$ (T$_{SiO}$=1000°C)] and Si-concentration in the $\beta$-Ga2O3 layers measured by secondary ion mass spectrometry highlighting unprecedented control of continuous Si-doping for oxide MBE, i.e., $N_{Si}$ from 4x10$^{17}$ cm$^{-3}$ ($T_{SiO}$=700°C) up to 1.7x10$^{20}$ cm$^{-3}$ ($T_{SiO}$=900°C). For a homoepitaxial $\beta$-Ga2O3 layer an Hall charge carrier concentration of 3x10$^{19}$ cm$^{-3}$ in line with the provided $\Phi_{SiO}$ ($T_{SiO}$=800°C) is demonstrated. No SiO-incorporation difference was found between $\beta$-Ga2O3(010) layers homoepitaxially grown at 750°C and $\beta$-Ga2O3(-201) layers heteroepitaxially grown at 550°C. The presence of activated oxygen (plasma) resulted in partial source oxidation and related decrease of doping concentration (particularly at $T_{SiO}$<800°C) which has been tentatively explained with a simple model. Degassing the source at 1100°C reverted the oxidation.

Growth and Characterization of Boron Delta-Function Shaped Doping Layer in Silicon by Molecular Beam Epitaxy

The Location and Doping Effect of Boron in Si Nanocrystals Embedded Silicon Oxide Film

Boosting the Boron Dopant Level in Monolayer Doping by Carboranes

Influence of Boron Doping on Microcrystalline Silicon Growth

Suppression of Interfacial Boron Accumulation and Defect Density in Molecular Beam Epitaxial Silicon

Density Functional Theory Study on the B Doping and B/P Codoping of Si Nanocrystals Embedded in SiO2

Full Activation of Boron in Silicon Doped by Self-Assembled Molecular Monolayers

Study on the effects of Si-doping in molecular beam heteroepitaxial β-Ga2O3 films

First-Principles Study of 2.2 Nm Silicon Nanocrystals Doped with Boron

Boron- and Phosphorus-Hyperdoped Silicon Nanocrystals

Electrical and Optical Properties of Boron‐doped Nanocrystalline Silicon Films Deposited by PECVD

Observation of Boron Doping Induced Surface Roughening in Silicon Molecular Beam Epitaxy

Boron-doped Diamond MOSFETs with Gradual Channel Doping Density

Promotion of boron diffusion and gettering by employing thin Al2O3 layer as a reaction barrier

Controlling the dopant dose in silicon by mixed-monolayer doping

First Principles Study on Phosphorus or Boron Doping in Si Nanocrystals with Various Sizes Embedded in SiO2 Matrix

Extremely Narrow Sb Delta-Doped Epitaxial Layer Characterized by X-Ray Reflectivity

A First-Principles Investigation into the Adsorption Behavior and Deposition Mechanism of Boron-Containing Gases on Si(100) Surfaces During Chemical Vapor Deposition

Influence of Boron-doping on Electrical Properties of Na-Si:H Thin Film Prepared by PECVD

Towards controllable Si-doping in oxide molecular beam epitaxy using a solid SiO source: Application to $β$-Ga2O3

Depth Profile of Delta-doped Semiconductors by X-Ray Reflection Technique