Towards controllable Si-doping in oxide molecular beam epitaxy using a solid SiO source: Application to $β$-Ga2O3

A. Ardenghi,O. Bierwagen,A. Falkenstein,G. Hoffmann,J. Lähnemann,M. Martin,P. Mazzolini

DOI: https://doi.org/10.1063/5.0087987

2022-02-12

Abstract:The oxidation-related issues in controlling Si doping from the Si source material in oxide molecular beam epitaxy (MBE) is addressed by using solid SiO as an alternative source material in a conventional effusion cell. Line-of-sight quadrupole mass spectrometry of the direct SiO-flux ($\Phi_{SiO}$) from the source at different temperatures ($T_{SiO}$) confirmed SiO molecules to sublime with an activation energy of 3.3eV. The $T_{SiO}$-dependent $\Phi_{SiO}$ was measured in vacuum before and after subjecting the source material to an O$_{2}$-background of $10^{-5}$ mbar (typical oxide MBE regime). The absence of a significant $\Phi_{SiO}$ difference indicates negligible source oxidation in molecular O$_{2}$. Mounted in an oxygen plasma-assisted MBE, Si-doped $\beta$-Ga2O3 layers were grown using this source. The $\Phi_{SiO}$ at the substrate was evaluated [from 2.9x10$^{9}$ cm$^{-2}$s$^{-1}$ ($T_{SiO}$=700°C) to 5.5x10$^{13}$ cm$^{-2}$s$^{-1}$ (T$_{SiO}$=1000°C)] and Si-concentration in the $\beta$-Ga2O3 layers measured by secondary ion mass spectrometry highlighting unprecedented control of continuous Si-doping for oxide MBE, i.e., $N_{Si}$ from 4x10$^{17}$ cm$^{-3}$ ($T_{SiO}$=700°C) up to 1.7x10$^{20}$ cm$^{-3}$ ($T_{SiO}$=900°C). For a homoepitaxial $\beta$-Ga2O3 layer an Hall charge carrier concentration of 3x10$^{19}$ cm$^{-3}$ in line with the provided $\Phi_{SiO}$ ($T_{SiO}$=800°C) is demonstrated. No SiO-incorporation difference was found between $\beta$-Ga2O3(010) layers homoepitaxially grown at 750°C and $\beta$-Ga2O3(-201) layers heteroepitaxially grown at 550°C. The presence of activated oxygen (plasma) resulted in partial source oxidation and related decrease of doping concentration (particularly at $T_{SiO}$<800°C) which has been tentatively explained with a simple model. Degassing the source at 1100°C reverted the oxidation.

Materials Science,Applied Physics

What problem does this paper attempt to address?

This paper aims to solve the oxidation - related problems encountered when using silicon (Si) source materials for doping during oxide molecular beam epitaxy (MBE). Specifically, the authors propose a method of using solid - state silicon monoxide (SiO) as an alternative source material to achieve controllability of Si doping in β - gallium oxide (β - Ga₂O₃) layers. Through this method, researchers hope to achieve continuous and stable Si doping over a wide temperature range, thereby enhancing the application potential of β - Ga₂O₃ materials in power electronic devices.

### Main problems
1. **Problems in controlling Si doping**:
- In the traditional MBE process, when using elemental Si as a doping source, the Si source is easily oxidized into SiO₂ by oxygen, resulting in an unstable doping concentration, especially more significantly at lower growth temperatures.
- This instability limits the precise control of the Si doping concentration, especially in the low - concentration range (\( N_{\text{Si}} < 10^{18} \, \text{cm}^{-3} \)).

2. **Advantages of using SiO as a doping source**:
- Using solid - state SiO as a doping source can avoid excessive oxidation of the Si source because SiO is already a sub - oxide and has a lower probability of further oxidation.
- By adjusting the temperature of the SiO source, the flux of SiO can be precisely controlled over a wide range, thereby achieving continuous control of the Si doping concentration in the β - Ga₂O₃ layer.

### Experimental methods
- **Measurement of SiO flux**: Use a quadrupole mass spectrometer (QMS) to measure the direct flux (\(\Phi_{\text{SiO}}\)) of SiO at different temperatures and confirm that the sublimation activation energy of SiO molecules is 3.3 eV.
- **Oxidation experiment of SiO source**: Expose the SiO source to an O₂ background pressure of 10⁻⁵ mbar and observe whether it will be oxidized.
- **Growth of β - Ga₂O₃ layer**: In an oxygen - plasma - assisted MBE system, use the SiO source to grow Si - doped β - Ga₂O₃ layers and measure the Si doping concentration by secondary ion mass spectrometry (SIMS).

### Experimental results
- **Temperature dependence of SiO flux**: At different SiO source temperatures, the measured SiO flux ranges from \(2.9 \times 10^9 \, \text{cm}^{-2}\text{s}^{-1} \) (700°C) to \(5.5 \times 10^{13} \, \text{cm}^{-2}\text{s}^{-1} \) (1000°C).
- **Control of Si doping concentration**: Si doping concentrations from \(4 \times 10^{17} \, \text{cm}^{-3} \) to \(1.7 \times 10^{20} \, \text{cm}^{-3} \) have been achieved, and the doping concentration is independent of the growth direction and growth temperature.
- **Effect of partial oxidation**: In the presence of active oxygen, the surface of the SiO source will gradually be oxidized into SiO₂, resulting in a decrease in the SiO flux. The performance of the SiO source can be restored by high - temperature annealing (1100°C).

### Conclusions
- This research successfully demonstrates the potential of using solid - state SiO as a doping source to achieve controllable Si doping in oxide MBE.
- By adjusting the temperature of the SiO source, the Si doping concentration can be precisely controlled over a wide range, thereby enhancing the application prospects of β - Ga₂O₃ materials in power electronic devices.
- The presence of active oxygen will cause partial oxidation of the SiO source, but its performance can be restored by high - temperature annealing.