Abstract:The oxidation-related issues in controlling Si doping from the Si source material in oxide molecular beam epitaxy (MBE) is addressed by using solid SiO as an alternative source material in a conventional effusion cell. Line-of-sight quadrupole mass spectrometry of the direct SiO-flux ($\Phi_{SiO}$) from the source at different temperatures ($T_{SiO}$) confirmed SiO molecules to sublime with an activation energy of 3.3eV. The $T_{SiO}$-dependent $\Phi_{SiO}$ was measured in vacuum before and after subjecting the source material to an O$_{2}$-background of $10^{-5}$ mbar (typical oxide MBE regime). The absence of a significant $\Phi_{SiO}$ difference indicates negligible source oxidation in molecular O$_{2}$. Mounted in an oxygen plasma-assisted MBE, Si-doped $\beta$-Ga2O3 layers were grown using this source. The $\Phi_{SiO}$ at the substrate was evaluated [from 2.9x10$^{9}$ cm$^{-2}$s$^{-1}$ ($T_{SiO}$=700°C) to 5.5x10$^{13}$ cm$^{-2}$s$^{-1}$ (T$_{SiO}$=1000°C)] and Si-concentration in the $\beta$-Ga2O3 layers measured by secondary ion mass spectrometry highlighting unprecedented control of continuous Si-doping for oxide MBE, i.e., $N_{Si}$ from 4x10$^{17}$ cm$^{-3}$ ($T_{SiO}$=700°C) up to 1.7x10$^{20}$ cm$^{-3}$ ($T_{SiO}$=900°C). For a homoepitaxial $\beta$-Ga2O3 layer an Hall charge carrier concentration of 3x10$^{19}$ cm$^{-3}$ in line with the provided $\Phi_{SiO}$ ($T_{SiO}$=800°C) is demonstrated. No SiO-incorporation difference was found between $\beta$-Ga2O3(010) layers homoepitaxially grown at 750°C and $\beta$-Ga2O3(-201) layers heteroepitaxially grown at 550°C. The presence of activated oxygen (plasma) resulted in partial source oxidation and related decrease of doping concentration (particularly at $T_{SiO}$<800°C) which has been tentatively explained with a simple model. Degassing the source at 1100°C reverted the oxidation.

Oxygen Δ-Doped Si Multi-Layers Grown by Molecular Beam Epitaxy

Pre-deposition Growth of Interfacial SiO2 Layer by Low-Oxygen-partial-pressure Oxidation in the Al2O3/4H-SiC MOS Structure

Oxynitridization Dependent Interface Control and Band Alignment of AlON/SiON/Si Gate Stacks Grown by Metalorganic Chemical Vapor Deposition

Growth and Characterization of Boron Delta-Function Shaped Doping Layer in Silicon by Molecular Beam Epitaxy

Towards controllable Si-doping in oxide molecular beam epitaxy using a solid SiO source: Application to $β$-Ga2O3

Systematic Study of the SiOx Film with Different Stoichiometry by Plasma-Enhanced Atomic Layer Deposition and Its Application in SiOx/SiO2 Super-Lattice

Si/CoSi/sub 2//si[100] Heteroepitaxial Growth by Molecular Beam Epitaxy and Novel Solid Phase Epitaxy

Dual‐functional Crystalline BeO Layer in Enhancement‐mode ZnO/Si Thin Film Transistors

Cubic Mgxzn1-Xo Films Grown on Si(111)

Growth of Si/SiO2 superlattices in MBE system and its luminescence

Selective Area Epitaxy of Complex Oxide Heterostructures on Si by Oxide Hard Mask Lift-Off

A Low Temperature Silicon‐on‐Insulator Fabrication Process Using Si MBE on Double‐Layer Porous Silicon

Epitaxial Zn1−Mg O Films Grown on (1 1 1) Si by Pulsed Laser Deposition

Photoluminescence of Erbium–oxygen-Codoped Silicon Multilayers Prepared by Molecular Beam Epitaxy

Si-doped (AlGa)2O3 growth on a-, m- and r-plane α-Al2O3 substrates by molecular beam epitaxy

The Structural and Optical Properties of nc-Si/SiO2 Multilayers

Constructing Oxide Interfaces and Heterostructures by Atomic Layer-By-Layer Laser Molecular Beam Epitaxy

Single Crystalline Tm2O3 Films Grown on Si (001) by Atomic Oxygen Assisted Molecular Beam Epitaxy

Study on the effects of Si-doping in molecular beam heteroepitaxial β-Ga2O3 films

Doping And Growth Of Thin Si Epilayer And Sige By Uhv/Cvd

Soi Structures Produced By Oxygen Ion-Implantation And Their Annealing Behavior