Abstract:Ultrawide bandgap (UWBG) gallium oxide (Ga2O3) represents an emerging semiconductor material with excellent chemical and thermal stability. It has a band gap of 4.5-4.9 eV, much wider than that of the GaN (3.4 eV) and 4H-SiC (3.2 eV). The monoclinic β-phase Ga2O3 represents the thermodynamically stable crystal among the known five known phases (α, β, γ, d, ε/κ). The breakdown field of β-Ga2O3 is predicted to be 6-8 MV/cm, which is much larger than that of the 4H-SiC and GaN. These unique properties make β-Ga2O3 a promising candidate for high power electronic device and solar blind photodetector applications. Single crystal β-Ga2O3 substrates can be synthesized by scalable and low cost melting based growth techniques. Metalorganic chemical vapor deposition (MOCVD) growth technique was demonstrated to produce high quality β-Ga2O3 thin films and its ternary (AlxGa1-x)2O3 alloys. Control of background and n-type doping in β-Ga2O3 will be discussed. Record carrier mobilities of 194 cm2/V·s at room temperature and ~10,000 cm2/V·s at low temperature were measured for MOCVD β-Ga2O3 thin films. Growth and fundamental understanding of β-(AlxGa1-x)2O3 are still limited. The incorporation of Al in beta-phase Ga2O3 has not been well understood, although it was predicted up to 60% of Al composition could be incorporated into β-Ga2O3. MOCVD growth of β-AlGaO targeting for Al composition of > 40% will be discussed. N-type doping capability as a function of Al composition in (AlxGa1-x)2O3 is another important fundamental question. Charge carrier transport properties in (AlxGa1-x)2O3 will be discussed. In addition, MOCVD growth of different phases of Ga2O3 and AlGaO will be presented. Acknowledgement: The authors acknowledge the funding support from the Air Force Office of Scientific Research FA9550-18-1-0479 (AFOSR, Dr. Ali Sayir) and the National Science Foundation (1810041, 2019753, 1755479).

Si-doped (AlGa)2O3 growth on a-, m- and r-plane α-Al2O3 substrates by molecular beam epitaxy

MOCVD growth of Si-doped α-(AlGa)2O3 on m-plane α-Al2O3 substrates

MOCVD Epitaxy of α-(AlxGa1−x)2O3 (x =0–100%) on m-Plane Sapphire Substrate

Epitaxial growth of α-(Al x Ga1− x )2O3 by suboxide molecular-beam epitaxy at 1 μm/h

Growth, catalysis and faceting of $α$-Ga$_2$O$_3$ and $α$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ on $m$-plane $α$-Al$_2$O$_3$ by molecular beam epitaxy

Growth, catalysis, and faceting of α-Ga2O3 and α-(In x Ga1− x )2O3 on m -plane α-Al2O3 by molecular beam epitaxy

Growth of $α-Ga_2O_3$ on $Al_2O_3$ by conventional molecular-beam epitaxy and metal-oxide-catalyzed epitaxy

Growth of α-Ga2O3 on α-Al2O3 by conventional molecular-beam epitaxy and metal–oxide-catalyzed epitaxy

Heteroepitaxy of ε-Ga2O3 thin films grown on AlN/Si(1 1 1) templates by metal–organic chemical vapor deposition

Properties of Si-doped a-plane AlGaN layers

Study on the Growth of Pure and Ga3+ Doped γ-LiAlO2 Crystals

Study of electrical and structural properties of non-polar a-plane p-AlGaN epi-layers with various Al compositions

Investigation of Si incorporation in (010) β-Ga2O3 films grown by plasma-assisted MBE using diluted disilane as Si source and suboxide Ga2O precursor

The growth and characterization of GaN grown on an Al2O3 coated (0 0 1) Si substrate by metalorganic vapor phase epitaxy

Metalorganic Chemical Vapor Deposition of \b{eta}-(AlxGa1-x)2O3 thin films on (001) \b{eta}-Ga2O3 substrates

Continuous Si doping in (010) and (001) β-Ga2O3 films by plasma-assisted molecular beam epitaxy

(Digital Presentation) MOCVD Growth of Ga2O3, Algao and Heterostructures

Growth studies of m -GaN layers on LiAlO 2 by MOCVD

Impact of chamber pressure and Si-doping on the surface morphology and electrical properties of homoepitaxial (100) β-Ga2O3 thin films grown by MOVPE

Epitaxial growth and characterisation of nonpolar m-plane GaN on LaAlO3 substrate

Towards controllable Si-doping in oxide molecular beam epitaxy using a solid SiO source: Application to $β$-Ga2O3