Growth of Si/SiO2 superlattices in MBE system and its luminescence

Feng Lin,Chi Sheng,Dawei Gong,Xiaohan Liu

1998-01-01

Abstract:By using the technique of Si and O2 co-deposition, SiO2 with perfect stoichiometry has been grown in a molecular-beam epitaxy system. A structure of Si/SiO2 superlattices has been design and its photoluminescence under the excitation of Ar+ laser is observed.

What problem does this paper attempt to address?

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Zhang Lei,Ye Hui,Huangfu Yourui,Zhan Wenbo,Liu Xu

DOI: https://doi.org/10.3969/j.issn.1672-7126.2011.06.21

2011-01-01

Abstract:The high density germanium quantum dots(QDs) were deposited by vacuum evaporation in a molecular beam epitaxy(MBE) reactor,on the Si substrates covered with ultra thin SiO2buffer layers.The impacts of the growth conditions on microstructures and properties of the Ge QDs were studied with scanning electron microscopy,energy dispersive spectroscopy,reflection high energy electron diffraction,and Raman spectroscopy.The results show that the Ge quantum-dots with a density of 1011 cm-2 were fabricated,and that the annealing relaxed the residue strains in the quantum-dots.The growth mechanisms and advantages over Stranski Krastanow(S-K) technique were also tentatively discussed.
Growth of photoluminescent nanometer Si-SiOx films by reactive evaporation

Shiguo Zhang,Ruixin Fan,Xiaoqing Q. Deng,Jun Yuan,Wei Chen

1999-01-01

Abstract:Si-SiOx films consisted of nanometer sized crystal grains were successfully grown on n-type 2-inch Si wafers by using reactive evaporation technique. The microstructures and chemical composition of the films were studied with X-ray diffraction, X-ray photoelectron spectroscopy and photoluminescence spectroscopy techniques. The experimental results show that (1) the growth parameters may significantly affect the nanocrystal sizes; (2) when SiO is used as the evaporation source, the Si-SiOx films grown are photoluminescent. Besides, our preliminary research indicates that the photoluminescence may possibly originate from quantum effects of Si nanocrystals instead of defects and interfacial effects.
Growth of large-area 2D MoS₂(₁-x) Se₂x semiconductor alloys.

Qingliang Feng,Yiming Zhu,Jinhua Hong,Mei Zhang,Wenjie Duan,Nannan Mao,Juanxia Wu,Hua Xu,Fengliang Dong,Fang Lin,Chuanhong Jin,Chunming Wang,Jin Zhang,Liming Xie

DOI: https://doi.org/10.1002/adma.201306095

2014-01-01

Abstract:Semiconducting MoS₂(₁-x) Se₂x mono-layers where x = 0-0.40 are successfully grown over large areas. A random arrangement of the S and Se atoms and a tunable bandgap photoluminescence are observed. Atomically thin, 2D semiconductor alloys with tunable bandgaps have potential applications in nano- and opto-electronics. Field-effect transistors fabricated with the monolayers exhibit high on/off ratios of >10(5).
Magnesium catalyzed growth of SiO2 hierarchical nanostructures by a thermal evaporation process

Zhihong Liu,Qing Yang,Hui Zhang,Lei Wang,Dongsheng Li,Deren Yang

DOI: https://doi.org/10.1088/0957-4484/19/16/165601

IF: 3.5

2008-01-01

Nanotechnology

Abstract:SiO2 hierarchical nanostructures consisting of a wire-like main stem and lots of rod-like sub-branches have been synthesized by a magnesium catalyzed thermal evaporation process. It is indicated that magnesium plays a critical role in the synthesis of SiO2 hierarchical nanostructures including promotion for SiO evaporation and hierarchical-like growth of SiO2. Moreover, the photoluminescence ( PL) analysis of the SiO2 hierarchical nanostructures reveals that blue and ultraviolet ( UV) emissions are detected, which are different from those of other SiO2 nanostructures. Finally, the growth mechanism and PL emission of SiO2 hierarchical nanostructures have been preliminarily discussed.
Optical properties of Ge/Si quantum dot superlattices

Zheng Yang,Yi Shi,Jianlin Liu,Bo Yan,Rong Zhang,Youdou Zheng,Kanglong Wang

DOI: https://doi.org/10.1016/j.matlet.2004.08.016

IF: 3

2004-01-01

Materials Letters

Abstract:Self-assembled Ge/Si quantum dot (QD) superlattices (SLs) were grown by a solid-source molecular beam epitaxy (MBE) system with the Stranski-Kranstanov (SK) growth mode. Atomic force microscope (AFM) and transmission electron microscope (TEM) characterizations of the samples were presented. Photoluminescence (PL) and Raman scattering measurements were carried out. The temperature dependence of the PL intensity has been reported and fitted by the Arrhenius and Berthelot type function. Some valuable parameters were obtained through the fitted curves, one of which was closely related to the dimension and effective mass of electron of the QDs.
Luminescence Studies of a Si/SiO2 Superlattice

B Averboukh,R Huber,KW Cheah,YR Shen,GG Qin,ZC Ma,WH Zong

DOI: https://doi.org/10.1063/1.1498960

IF: 2.877

2002-01-01

Journal of Applied Physics

Abstract:Photoluminescence and electroluminescence from a Si/SiO2 superlattice have been measured. They show similar characteristics and exhibit an inhomogeneously broadened photoluminescence band peaked at 2.06 eV. The excitation spectrum indicates that excitations occur in the Si layers. The insensitivity of the luminescence spectrum and decay to temperature and excitation wavelength suggests that luminescence originates from transitions between localized defect states. These localized states are most likely defect states residing at the Si/SiO2 interfaces, because there should be a significant concentration of defects at the interface and SiO2 due to the large lattice mismatch and the amorphous state. The close proximity of these states offers a more rapid transition path for the excited electrons. An energy band diagram of the superlattice is constructed based on our results.
Si/CoSi/sub 2//si[100] Heteroepitaxial Growth by Molecular Beam Epitaxy and Novel Solid Phase Epitaxy

XP Qu,GP Ru,BZ Li,Jie-Qin,ZM Jiang,P Chu

DOI: https://doi.org/10.1109/icsict.1998.785871

1998-01-01

Abstract:A new approach to fabricate Si/CoSi/sub 2//Si heterostructures is presented. By incorporation of novel solid phase epitaxy with molecular beam epitaxy (MBE), an epitaxial Si/CoSi/sub 2//Si[100] double heterostructure has been grown. With Co/Ti/Si ternary solid state reaction and subsequent surface treatment, a high quality CoSi/sub 2/ surface is obtained, on which a crystalline Si layer is epitaxially grown by MBE. The double epitaxial heterostructure is confirmed by Rutherford backscattering spectroscopy and transmission electron microscopy measurements.
Systematic Study of the SiOx Film with Different Stoichiometry by Plasma-Enhanced Atomic Layer Deposition and Its Application in SiOx/SiO2 Super-Lattice

Hong-Ping Ma,Jia-He Yang,Jian-Guo Yang,Li-Yuan Zhu,Wei Huang,Guang-Jie Yuan,Ji-Jun Feng,Tien-Chien Jen,Hong-Liang Lu

DOI: https://doi.org/10.3390/nano9010055

IF: 5.3

2019-01-01

Nanomaterials

Abstract:Atomic scale control of the thickness of thin film makes atomic layer deposition highly advantageous in the preparation of high quality super-lattices. However, precisely controlling the film chemical stoichiometry is very challenging. In this study, we deposited SiOx film with different stoichiometry by plasma enhanced atomic layer deposition. After reviewing various deposition parameters like temperature, precursor pulse time, and gas flow, the silicon dioxides of stoichiometric (SiO2) and non-stoichiometric (SiO1.8 and SiO1.6) were successfully fabricated. X-ray photo-electron spectroscopy was first employed to analyze the element content and chemical bonding energy of these films. Then the morphology, structure, composition, and optical characteristics of SiOx film were systematically studied through atomic force microscope, transmission electron microscopy, X-ray reflection, and spectroscopic ellipsometry. The experimental results indicate that both the mass density and refractive index of SiO1.8 and SiO1.6 are less than SiO2 film. The energy band-gap is approved by spectroscopic ellipsometry data and X-ray photo-electron spectroscopy O 1s analysis. The results demonstrate that the energy band-gap decreases as the oxygen concentration decreases in SiOx film. After we obtained the Si-rich silicon oxide film deposition, the SiO1.6/SiO2 super-lattices was fabricated and its photoluminescence (PL) property was characterized by PL spectra. The weak PL intensity gives us greater awareness that more research is needed in order to decrease the x of SiOx film to a larger extent through further optimizing plasma-enhanced atomic layer deposition processes, and hence improve the photoluminescence properties of SiOx/SiO2 super-lattices.
Electroluminescence from amorphous SiSiO2 superlattices

G.G Qin,S.Y Ma,Z.C Ma,W.H Zong,You Li-ping

DOI: https://doi.org/10.1016/S0038-1098(98)00043-X

IF: 1.934

1998-01-01

Solid State Communications

Abstract:Amorphous SiSiO2 superlattices, with four periods, have been grown using the two-target alternation magnetron sputtering technique. The thicknesses of SiO2 layers in all the superlattices are 1.5 nm and those of Si layers in six types of the superlattices are 1.0, 1.4, 1.8, 2.2, 2.6 and 3.0 nm. Visible electroluminescence (EL) has been observed from the semitransparent Au film/(amorphous SiSiO2 superlattice)/p type Si structures at a forward bias of 4 V or larger. A broad band with two peaks (or shoulders) around 630–650 nm and 510 nm appear in the EL spectra of the structures. The effects of thicknesses of Si layers in the amorphous SiSiO2 superlattices and of input electrical power on the EL spectra are studied systematically.
The Structural and Optical Properties of nc-Si/SiO2 Multilayers

De-yuan WEI,De-yuan CHEN,Pei-gao HAN,Zhong-yuan MA,Jun XU,Kun-ji CHEN

2008-01-01

Chinese Journal of Luminescence

Abstract:Amorphous-Si∶H/SiO2 multilayers with various sub-layer thicknesses were layer-by-layer deposited and in situ plasma oxidized in a plasma-enhanced chemical vapor deposition system. Nano-crystalline Si can be formed in the initial a-Si sub-layers based on the constrained crystallization principal. Raman scattering and TEM measurements were used to characterize the structure of multilayers during the formation of nc-Si/SiO2 multilayers. It was found that the annealing temperature and the a-Si∶H sub-layer thickness influence on the crystallization process obviously. Photoluminescence was observed at room temperature and the PL peak position is about 750 nm. Light-emitting Diode with MOS (Metal-Oxide-Semiconductor) structure was designed and fabricated by evaporating Al electrodes on both the upper and the bottom surface of the sample. Electroluminescence at room temperature was also observed by the naked eye with the turn-on voltage of 6 V. The EL spectra contain two luminescence bands located at 520 nm and 650 nm, respectively. The influence of nc-Si and interface of nc-Si and SiO2 on the luminescent character of the device was briefly discussed.
Molecular Beam Epitaxial Growth of IV–VI Multiple Quantum Well Structures on Si(111) and BaF2(111) and Optical Studies of Epilayer Heating

HZ Wu,PJ McCann,O Alkhouli,XM Fang,D McAlister,K Namjou,N Dai,SJ Chung,PHO Rappl

DOI: https://doi.org/10.1116/1.1385915

2001-01-01

Abstract:IV–VI semiconductor multiple quantum well (MQW) structures (PbSe/PbSrSe) were grown on Si(111) and BaF2(111) substrates by molecular beam epitaxy. Structural and optical properties of the MQW structures have been studied using reflection high-energy electron diffraction, high resolution x-ray diffraction (HRXRD), Fourier-transform infrared (FTIR) transmission, and midinfrared photoluminescence (PL). Numerous satellite diffraction peaks and narrow linewidths of the HRXRD rocking curves indicate the high crystalline quality of the structures grown on both Si and BaF2. Longitudinal and oblique valley subband transitions without superposed interference fringes were observed in FTIR differential transmission spectra. Continuous wave midinfrared photoluminescence was also observed from both sets of samples. Comparison of FTIR and PL spectra allows determination of localized epilayer heating in the MQW samples due to optical pumping. For a typical laser pumping power of 9.1 W/cm2 the heating in a MQW layer on Si(111) was 70 °C, while the amount of heating for a MQW layer on lower thermal conductivity BaF2 was 83 °C.
Luminescence in Si/SiO2/Si structure formed by oxygen implantation

Zhonghan Shen,Changliang Wu,Qian Lu,Xin Zhang,Xiao-Jing Wu

DOI: https://doi.org/10.1002/pssa.200723038

2007-01-01

Abstract:Luminescent phenomenon, especially electroluminescence (EL), is studied for two samples with a structure of Si/SiO2/Si prepared by oxygen implantation. The asymmetry of EL found in this structure is attributed to the electrical asymmetry of these samples. Several luminescent spots can be observed at the exact same positions under both positive and negative bias, and their area density is about 10(2)/cm(2) in these samples. Photoemission microscope (PEM) and optical beam induced resistance change (OBIRCH) are used for the study of EL phenomenon before and after electrical breakdown of the samples, while transmission electron microscope (TEM) is used for the study of the sample's structure. Nc-Si (nanocrystal silicon) related peaks cannot be found in photoluminescence (PL) spectra for the sample containing Si islands, while oxygen defect related peaks between 350-650 tun can be found for all samples. Luminescence mechanism is discussed based on the model of defect luminescent center (DLC). (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Photoluminescence from Strained SiGe/Si Quantum Well Structures Grown by Si Molecular Beam Epitaxy

Y YANG,XK LU,D HUANG,XJ CHEN,Z JIANG,M YANG,Y FAN,D GONG,G ZHAO,X WANG

DOI: https://doi.org/10.1117/12.190791

1994-01-01

Abstract:We reported deep-level-free band edge luminescence from strained SiGe/Si multiple quantum well structures grown by conventional solid source Si MBE. No-phonon (NP) transitions due to symmetry-breaking alloy disordering in SiGe layers and transverse optical (TO) phonon replicas were clearly identified. A high quality of crystallinity is essential to the efficient luminescence. The choice of a higher growth temperature, Ts equals 870 degree(s)C, beyond the conventional growth temperature window 400-600 degree(s)C, was found to be important for radioactive recombination in SiGe/Si QWs structures.
Pulsed Laser Deposition of Large-Sized Superlattice Films with High Uniformity.

Biying Ye,Tian Miao,Yi Zhu,Haiming Huang,Yulong Yang,Mingming Shuai,Zhifei Zhu,Hangwen Guo,Wenbin Wang,Yinyan Zhu,Lifeng Yin,Jian Shen

DOI: https://doi.org/10.1063/5.0068795

2021-01-01

Abstract:Oxide superlattices often exhibit emergent physical properties that are desirable for future information device applications. The most common growth technique for fabrication of oxide superlattices is pulsed laser deposition (PLD), which is convenient yet powerful for the growth of various oxide superlattices. However, the sample size prepared by PLD is rather small confined by the plasmon plume, which greatly limits its potential for device applications. Here, we design a PLD system that is capable of fabricating large-sized oxide superlattices with high uniformity. Specifically, during growth, the laser beam scans the target surface by combining the pitch and yaw angle rotation of the high reflective mirror and the linear motion of the focus lens. A SiC susceptor is placed in between the sample holder and the substrate to improve the large area infrared heating efficiency. Using such a system, droplet-free 10 × 10 mm2 [(LSMO)12/(PCMO)6]7 superlattices are epitaxially grown with the same period of superlattices across the whole sample areas. The high uniformity of the superlattices is further illustrated by near identical physical properties of all regions of the superlattice films. The present PLD system can be used to grow various kinds of oxide superlattices with the area size as large as 2 in., which is highly useful for device applications of oxides.
Mbe Growth of Gaas/Algaas(Alas) Quantum-Well and Superlattice Structures

ZG CHEN,DZ SUN,JB LIANG,ZY XU,YH HUANG,WK GE,MY KONG

DOI: https://doi.org/10.1016/0749-6036(87)90080-2

IF: 3.22

1987-01-01

Superlattices and Microstructures

Abstract:MBE is the most highly developed technique to prepare ultra-thin multilayer heterostructures. In this paper, we report that high-quality quantum well and superlattice structures with controllable layer thicknesses as thin as one monolayer and with ideally abrupt GaAsAlxGa1−xAs interfaces have been obtained by a home-made MBE system and investigated from the view-point of crystallography and optical properties.
Large and small angle x-ray scattering studies of Si/SiGe superlattices grown by gas-source molecular beam epitaxy

J M Hartmann,J Eymery,V Calvo

DOI: https://doi.org/10.1088/0268-1242/17/3/303

IF: 2.048

2002-02-18

Semiconductor Science and Technology

Abstract:We have performed large and small angle x-ray scattering measurements on Si/Si0.7Ge0.3 superlattices grown by gas-source molecular beam epitaxy. The thickness of the Si and SiGe layers as well as their Ge content were extracted through a correlation between large-angle x-ray diffraction and photoluminescence measurements. A SiGe growth rate enhancement was observed during the first stages of the SiGe layer deposition, which might be due to a slow build-up of the Ge surface population. The Fresnel optical method was used to analyse the small-angle specular x-ray reflectivity data. The interface root mean square roughness, 7 ± 1 Å for the samples grown at 520 and 580 °C, and 5 ± 1 Å for the sample grown at 550 °C, are quite comparable to those found in Si/SiGe superlattices grown by solid source MBE. The crystallographic quality of those stackings is very good; no measurable period dispersion has been obtained in x-ray diffraction.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter
Oxygen Δ-Doped Si Multi-Layers Grown by Molecular Beam Epitaxy

C Sheng,F Lin,DW Gong,J Wan,YL Fan,X Wang

DOI: https://doi.org/10.1143/jjap.37.1206

IF: 1.5

1998-01-01

Japanese Journal of Applied Physics

Abstract:An oxygen δ-doped Si multilayer structure has been grown by molecular beam epitaxy (MBE). Thermal oxidation of a Si layer prepared by an MBE system at a low oxygen partial pressure resulted in a thin ordered oxide layer with a very flat surface. On the ordered oxide, Si was epitaxied through the solid phase epitaxy. Five periods of Si(2 nm)/SiOx(1 nm) multilayers were grown successfully. The O-doped Si layer (SiOx) was composed of 7 atomic layers and the crystalline structure of the SiOx layer was the same as that of the Si substrate but had a relatively transverse displacement. The in-plane stress restricted the number of the oxide layers grown to a thickness of less than 6 atomic layers. This structure may be the gateway for realizing Si-based quantum wells.
Influence Of Si Crystallization Evolution On The Er Luminescence In Superlattices Er:Si/Al2o3

J. Z. Wang,Y. Shi,Z. Q. Shi,Z. S. Tao,X. L. Zhang,L. Pu,E. Ma,R. Zhang,Y. D. Zheng,F. Lu

DOI: https://doi.org/10.1109/GROUP4.2008.4638115

2008-01-01

Abstract:Er:Si/Al2O3 superlattices are fabricated by pulsed laser deposition (PLD) technique. Photoluminescence (PL) and PL excitation spectra measurements are carried out. The annealing temperature dependent PL intensity curves are presented. The influence of Si crystallization on the Er ions luminescence shows that the thinner the Si layer, and the shorter the distance r, the better its sensitizing performance.
Structure and Electronic Properties of SiO2/Si Multilayer Superlattices: Si K Edge and L3,2 Edge X-Ray Absorption Fine Structure Study

R Sammynaiken,SJ Naftel,TK Sham,KW Cheah,B Averboukh,R Huber,YR Shen,GG Qin,ZC Ma,WH Zong

DOI: https://doi.org/10.1063/1.1501742

IF: 2.877

2002-01-01

Journal of Applied Physics

Abstract:We report an x-ray absorption fine structure study at the Si K and L3,2 edges of a series of Si/SiO2 superlattices (SL). The SL system comprises four periods of elemental silicon with a spacing of 1, 1.4, 2.2, and 2.6 nm sandwiched by a 1.5 nm silicon oxide and capped by a 3 nm silicon oxide layer. These systems exhibit electroluminescence and photoluminescence. X-ray absorption near edge structure (XANES) at both the Si K and L3,2 edge confirms that the Si layers are amorphous. Polarization dependent measurement at the Si K edge reveals that a distinct Si/SiO2 interface exists with strong Si–O bonding oriented preferentially closer to the surface normal. High resolution XANES at the Si L3,2 edge shows a noticeable blueshift of the edge threshold as the lattice spacing decreases, in good accord with quantum confinement. The results and their implications for the origin (quantum confinement and interface/oxide defects) of luminescence in these superlattice systems are discussed.
Electroluminescence Spectra Study of Au/Si/SiO2 Superlattice/p‐si Structures with Gamma Irradiation

SY Ma,GG Qin,YY Wang,DY He,XQ Liu

DOI: https://doi.org/10.1002/sia.1015

2001-01-01

Surface and Interface Analysis

Abstract:Visible light emission can be observed from alternation‐magnetron‐sputtered Si/SiO 2 superlattices (SSOSLs) when the forward bias exceeds 5 V. The electroluminescence (EL) spectra of Au/ amorphous Si/SiO 2 superlattice/p‐Si structures with Si layers of nine different thicknesses showed a peak located at 650 nm. After the SSOSLs were irradiated by a 60 Co radiative source, a new strong 470 nm blue peak emerged from the EL spectra in all the Au/ Si/SiO 2 superlattice/p‐Si structures. We rule out the possibility that both the excitation and recombination processes of the observed EL are from the nanometre silicon layers, as described by the quantum confinement model. The experimental results can be explained by electrons from the Au electrode and holes from the p‐Si substrate tunnelling into the luminescence centres in the SiO 2 layers and recombining radiatively there. Copyright © 2001 John Wiley & Sons, Ltd.

Growth of Si/SiO2 superlattices in MBE system and its luminescence

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Growth of photoluminescent nanometer Si-SiOx films by reactive evaporation

Growth of large-area 2D MoS₂(₁-x) Se₂x semiconductor alloys.

Magnesium catalyzed growth of SiO2 hierarchical nanostructures by a thermal evaporation process

Optical properties of Ge/Si quantum dot superlattices

Luminescence Studies of a Si/SiO2 Superlattice

Si/CoSi/sub 2//si[100] Heteroepitaxial Growth by Molecular Beam Epitaxy and Novel Solid Phase Epitaxy

Systematic Study of the SiOx Film with Different Stoichiometry by Plasma-Enhanced Atomic Layer Deposition and Its Application in SiOx/SiO2 Super-Lattice

Electroluminescence from amorphous SiSiO2 superlattices

The Structural and Optical Properties of nc-Si/SiO2 Multilayers

Molecular Beam Epitaxial Growth of IV–VI Multiple Quantum Well Structures on Si(111) and BaF2(111) and Optical Studies of Epilayer Heating

Luminescence in Si/SiO2/Si structure formed by oxygen implantation

Photoluminescence from Strained SiGe/Si Quantum Well Structures Grown by Si Molecular Beam Epitaxy

Pulsed Laser Deposition of Large-Sized Superlattice Films with High Uniformity.

Mbe Growth of Gaas/Algaas(Alas) Quantum-Well and Superlattice Structures

Large and small angle x-ray scattering studies of Si/SiGe superlattices grown by gas-source molecular beam epitaxy

Oxygen Δ-Doped Si Multi-Layers Grown by Molecular Beam Epitaxy

Influence Of Si Crystallization Evolution On The Er Luminescence In Superlattices Er:Si/Al2o3

Structure and Electronic Properties of SiO2/Si Multilayer Superlattices: Si K Edge and L3,2 Edge X-Ray Absorption Fine Structure Study

Electroluminescence Spectra Study of Au/Si/SiO2 Superlattice/p‐si Structures with Gamma Irradiation