Abstract:Crystallization process of MgSiO3 gel and influence of crystallization on luminescence of Eu3+ ions have been investigated. The residual solvents in gels were vaporized in the temperature range between room temperature and 300 °C, and organic compounds chemically bound to Mg and Si were eliminated between 350 and 430 °C. The exothermic effect on the DTA curve corresponding to crystallization of MgSiO3 gel appeared at about 850 °C, and the activation energy of crystallization was found to be about 490 kJ/mol. When gels were fired between 750 and 1050 °C the crystalline phase was principally the clinoenstatite. The luminescence of Eu3+ ions was predominantly influenced by the crystallization gels. The intensity of excitation and emission bands in gel-derived crystals was much stronger than that in dried gel, and the strongest excitation band also transformed from 393 nm in dried gel to 250 nm in gel-derived crystals, which can be attributed to a dominant charge transition from ligands (O2− ions) to Eu3+ ions in gel-derived crystals. It was also found that in gel-derived crystals the main band corresponding to 5D0 → 7F2 transition (616 nm) was split by the crystal field into three bands, the band corresponding to 5D0 → 7F1 transition (593 nm) into three bands and the band corresponding to 5D0 → 7F4 transition (690 nm) into two bands; the energy level split of Eu3+ ions was markedly changed with the fired temperature gels.

Influence Of Si Crystallization Evolution On The Er Luminescence In Superlattices Er:Si/Al2o3

Influence of Si Crystallization Evolution on 1.54 Μm Luminescence in Er-doped Si/Al2O3 Multilayer

Sensitizing Properties of Luminescence Centers on the Emission of Er3+ in Si-Rich Sio2 Film

Correlation Of Efficient Luminescence With Crystal Structures Of Y-Er2si2o7 And Alpha-Er2si2o7 In Er-Doped Silicon Oxide Films

Efficient Sensitized Photoluminescence of Er Silicate in Silicon Oxide Films Embedded with Amorphous Silicon Clusters, Part I: Fabrication

Correlation of Efficient Luminescence with Crystal Structures of Y-Er2si2o7 and Α-Er2si2o7 in Er-doped Silicon Oxide Films

Photoluminescence Properties of Er-Doped Si/Al_2O_3 Multilayer Films

Enhanced Crystallization and Sensitization of Si Nanocrystals in Al2O3:Er/Si:Er Multilayers

Control of the Formation and Luminescent Properties of Polymorphic Erbium Silicates on Silicon

Fabrication and photoluminescence of Er-doped ZnO thin films on SiO2/Si substrate by pulsed laser deposition

Confinement Effect and Low-Defect Density-Induced Long Lifetime Er Silicate Nanowire Embedded in Silicon Oxide Film.

Crystallization process of MgSiO3 gel and influence of crystallization on luminescence of Eu3+ ions

Annealing temperature dependence of Er3+ photoluminescence in alternately Er-doped Si-rich Al2O3 multilayer film

Evolution of Photoluminescence from Si Nanocrystals Embedded in a SiO2 Matrix Prepared by Reactive Pulsed Laser Deposition

Enhancement of Sensitized Photoluminescence of Erbium Chloride Silicate Through Regulating Annealing

Effects of Excess Silicon on the 1540 Nm Er3+ Luminescence in Silicon Rich Oxynitride Films

Temperature Dependence of Sensitized Er3+ Luminescence in Silicon-Rich Oxynitride Films

Structure and Luminescence Evolution of Annealed Europium-doped Silicon Oxides Films

Evolution of the Sensitized Er 3+ Emission by Silicon Nanoclusters and Luminescence Centers in Silicon-Rich Silica

Enhanced Emission of Er3+ from Alternately Er Doped Si-Rich Al2o3 Multilayer Film with Si Nanocrystals As Broadband Sensitizers

Correlation Between Luminescence and Structural Evolution of Colloidal Silicon Nanocrystals Synthesized under Different Laser Fluences