Abstract: Silicon photoluminescence and lasing have been critical issues to breakthrough bottlenecks in the understanding of luminescence mechanisms. Unfortunately, long-standing disputes about the exciton recombination mechanism and fluorescence lifetime remain unresolved, especially about whether silicon nanocrystals (Si NCs) can realize fast direct-bandgap-like optical transitions. Here, using ground-state and excited-state density functional theory (DFT), we obtained intrinsic phonon-free optical transitions at sizes from Si22 to Si705, showing that very small Si NCs can realize a strong direct optical transition. Orbital labeling results show that this rapid transition does not come from the {\Gamma}-{\Gamma} -like transition, contrary to the conclusions from the effective mass approximation (EMA) and that {\Gamma}-X mixing leads to a quasi-direct bandgap. This anomalous transition is particularly intense with decreasing size (or enhancement of quantum confinement). By investigating electron and hole distributions generated in the optical transition, localized state-induced enhanced emission (LIEE) in Si NCs was proposed. Quantum confinement (QC) distorts the excited-state electron spatial distribution by localizing Bloch waves into the NC core, resulting in increased hole and electron overlap, thus inducing a fast optical process. This work resolves important debates and proposes LIEE to explain the anomalous luminescence--a phase transition from weak (or none) luminescent state to strong optical transition, which will aid attempts at realizing high-radiative-rate NCs materials and application-level Si lasers.

Correlation Between Luminescence and Structural Evolution of Colloidal Silicon Nanocrystals Synthesized under Different Laser Fluences

Evolution of Photoluminescence from Si Nanocrystals Embedded in a SiO2 Matrix Prepared by Reactive Pulsed Laser Deposition

Fully Radiative Relaxation Of Silicon Nanocrystals In Colloidal Ensemble Revealed By Advanced Treatment Of Decay Kinetics

Photoluminescence from Silicon Nanocrystals in Encapsulating Materials

Photoluminescence Responses of Si Nanocrystal to Differing Pumping Conditions

Influence of Si Crystallization Evolution on 1.54 Μm Luminescence in Er-doped Si/Al2O3 Multilayer

Surface Passivated Silicon Nanocrystals with Stable Luminescence Synthesized by Femtosecond Laser Ablation in Solution.

Origin and Evolution of Photoluminescence from Si Nanocrystals Embedded in A Sio2 Matrix

Mechanism for the Correlated Swinging of Photoluminescence Intensity and Peak Energy Shift with Sizes of Nanoscale Si Particles

Effects of Excess Silicon on the 1540 Nm Er3+ Luminescence in Silicon Rich Oxynitride Films

The Role of Silicon Oxide Layers in Luminescence of Ensembles of Silicon Quantum Dots

Fluorine-Passivated Silicon Nanocrystals: Surface Chemistry Versus Quantum Confinement

Evolution of photoluminescence in laser illuminating porous silicon

Enhancement of Intrinsic Optical Transitions in Silicon Nanocrystals by State Localization

1.5 Μm Luminescence of Silicon Nanowires Fabricated by Thermal Evaporation of SiO

Light Emission from Si Nanoclusters Formed at Low Temperatures

Localized State-Induced Enhanced Intrinsic Phonon-Free Optical Transition in Silicon Nanocrystals

Interface State-Related Linear and Nonlinear Optical Properties of Nanocrystalline Si/SiO2 Multilayers

Influence Of Si Crystallization Evolution On The Er Luminescence In Superlattices Er:Si/Al2o3

The Modulation on Luminescence of Er3+-doped Silicon-Rich Oxide Films by the Structure Evolution of Silicon Nanoclusters.

Tuning Confinement in Colloidal Silicon Nanocrystals with Saturated Surface Ligands