Pseudo nanocrystal silicon induced luminescence enhancement in a-Si /SiO2 multilayers
Peigao Han,Zhongyuan Ma,ZhengYue Xia,Deyuan Chen,Jun Xu,Bo Qian,San Chen,Wei Li,XinFan Huang,Kunji Chen,Duan Feng,韩培高,马忠元,夏正月,陈德媛,徐骏,钱波,陈三,李伟,黄信凡,陈坤基
DOI: https://doi.org/10.1088/1009-1963/16/5/040
2007-01-01
Chinese Physics
Abstract:Enhanced photoluminescence (PL) at room temperature from thermally annealed a-Si:H/SiO2 multilayers is observed through the step-by-step thermal post-treatment. The correlation between the PL, and the crystallization process is studied using temperature-dependent PL, Raman, cross section high-resolution transmission electron microscopy (X-HRTEM) and x-ray diffraction (XRD) techniques. An intensified PL band around 820 nm is discovered from the sample annealed near the crystallization onset temperature, which is composed of two peaks centred at 773 ran and 863 nm, respectively. It is found that the PL band centred at 863 nm is related to the pseudo nanocrystal (p-nc-Si) silicon, and the PL, band centred at 773 nm is attributed to Si = O bonds stabilized in the p-nc-Si surface.