Ar+ irradiation of Si nanocrystal-doped SiO2: Evolution of photoluminescence

Z XIE,Z LI,W FAN,D CHEN,Y ZHAO,M LU

DOI: https://doi.org/10.1016/j.apsusc.2006.12.031

IF: 6.7

2007-01-01

Applied Surface Science

Abstract:We report the evolution of photoluminescence (PL) of Si nanocrystals (nc-Si) embedded in a matrix of SiO2 during Ar+ ion bombardment. The integrated intensity of nc-Si PL falls down drastically before the Ar+ ion fluence of 1015ionscm−2, and then decreases slowly with the increasing ion fluence. At the meantime, the PL peak position blueshifts steadily before the fluence of 1015ionscm−2, and then changes in an oscillatory manner. Also it is found that the nc-Si PL of the Ar+-irradiated sample can be partly recovered after annealing at 800°C in nitrogen, but can be almost totally recovered after annealing in oxygen. The results confirm that the ion irradiation-induced defects are made up of oxygen vacancies, which absorb light strongly. The oscillatory peak shift of nc-Si can be related to a size-distance distribution of nc-Si in SiO2.