Abstract:The Si/SiGe heterosystem would be ideally suited for the realization of complementary metal-oxide-semiconductor (CMOS)-compatible integrated light sources, but the indirect band gap, exacerbated by a type-II band offset, makes it challenging to achieve efficient light emission. We address this problem by strain engineering in ordered arrays of vertically close-stacked SiGe quantum dot (QD) pairs. The strain induced by the respective lower QD creates a preferential nucleation site for the upper one and strains the upper QD as well as the Si cap above it. Electrons are confined in the strain pockets in the Si cap, which leads to an enhanced wave function overlap with the heavy holes near the upper QD's apex. With a thickness of the Si spacer between the stacked QDs below 5 nm, we separated the functions of the two QDs: The role of the lower one is that of a pure stressor, whereas only the upper QD facilitates radiative recombination of QD-bound excitons. We report on the design and strain engineering of the QD pairs via strain-dependent Schrödinger-Poisson simulations, their implementation by molecular beam epitaxy, and a comprehensive study of their structural and optical properties in comparison with those of single-layer SiGe QD arrays. We find that the double QD arrangement shifts the thermal quenching of the photoluminescence signal at higher temperatures. Moreover, detrimental light emission from the QD-related wetting layers is suppressed in the double-QD configuration.

Photoluminescence from Strained SiGe/Si Quantum Well Structures Grown by Si Molecular Beam Epitaxy

Photoluminescence spectra from SiGe/Si strained layer quantum well structure

Near Band-Edge Photoluminescence in Strained and Relaxed Si<sub><b>1</b>-<b>x</b></sub>Ge<sub><b>x</b></sub>/Si Quantum Wells

Optical properties of Ge/Si quantum dot superlattices

Difference of luminescent properties between strained InAsP/InP and strain-compensated InAsP/InGaAsP MQWs

Photoluminescence from Trapped Excitons in Quantum Well Structures

Photoluminescence enhancement by deterministically site-controlled, vertically stacked SiGe quantum dots

Influence of Etching on the Luminescence Characteristic of Strained InAsP/InGaAsP Multiple Quantum Wells

Luminescent Properties of Annealed and Directly Wafer-Bonded InAsP/InGaAsP Multiple Quantum Wells

Systematic Studies of the Photoluminescence of Ge Quantum Dots Grown on Strained Si(0.7)Ge(0.3) Buffer Layer

Mid-Infrared Photoluminescence of Pbse/Pbsrse Multiple Quantum Wells Grown by Molecular Beam Epitaxy

Temperature dependence of photoluminescence from as-grown and plasma-etched InAs0.45P0.55/In0.68Ga0.32As0.45P0.55 strained single quantum well

Photoluminescence of InGaN/AlGaN Strained Multiple Quantum Wells Influenced by Dry Etching

Enhanced photoluminescence due to lateral ordering of GeSi quantum dots on patterned Si(001) substrates.

Molecular Beam Epitaxial Growth of IV–VI Multiple Quantum Well Structures on Si(111) and BaF2(111) and Optical Studies of Epilayer Heating

Si+ ION IMPLANTATION INFLUENCE ON PHOTOLUMINESCENCE IN Si1-xGex/Si QUANTUM WELLS GROWN BY MOLECULAR BEAM EPITAXY

Electroluminescence enhancement of SiGe/Si multiple quantum wells through nanowall structures

The Strain, Energy Band and Photoluminescence of GaAs0.92Sb0·08/Al0.3Ga0.7As Multiple Quantum Wells Grown on GaAs Substrate

Photovoltaic Investigations of Interband Transitions in SiGe/Si Multiple Quantum Wells

Study Of Optical Properties In Gaas1-Xsbx/Gaas Single Quantum Wells

Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission