Abstract:The Si/SiGe heterosystem would be ideally suited for the realization of complementary metal-oxide-semiconductor (CMOS)-compatible integrated light sources, but the indirect band gap, exacerbated by a type-II band offset, makes it challenging to achieve efficient light emission. We address this problem by strain engineering in ordered arrays of vertically close-stacked SiGe quantum dot (QD) pairs. The strain induced by the respective lower QD creates a preferential nucleation site for the upper one and strains the upper QD as well as the Si cap above it. Electrons are confined in the strain pockets in the Si cap, which leads to an enhanced wave function overlap with the heavy holes near the upper QD's apex. With a thickness of the Si spacer between the stacked QDs below 5 nm, we separated the functions of the two QDs: The role of the lower one is that of a pure stressor, whereas only the upper QD facilitates radiative recombination of QD-bound excitons. We report on the design and strain engineering of the QD pairs via strain-dependent Schrödinger-Poisson simulations, their implementation by molecular beam epitaxy, and a comprehensive study of their structural and optical properties in comparison with those of single-layer SiGe QD arrays. We find that the double QD arrangement shifts the thermal quenching of the photoluminescence signal at higher temperatures. Moreover, detrimental light emission from the QD-related wetting layers is suppressed in the double-QD configuration.

Photoluminescence spectra from SiGe/Si strained layer quantum well structure

Photoluminescence from Strained SiGe/Si Quantum Well Structures Grown by Si Molecular Beam Epitaxy

Near Band-Edge Photoluminescence in Strained and Relaxed Si<sub><b>1</b>-<b>x</b></sub>Ge<sub><b>x</b></sub>/Si Quantum Wells

Excitation intensity dependence of photoluminescence spectra of SiGe quantum dots grown on prepatterned Si substrates: Evidence for biexcitonic transition

Visible Room-Temperature Photoluminescence of Ge-doped SiO2 Glasses Fabricated by a Sol–gel Process

Photoluminescence from Trapped Excitons in Quantum Well Structures

Optical properties of Ge/Si quantum dot superlattices

Systematic Studies of the Photoluminescence of Ge Quantum Dots Grown on Strained Si(0.7)Ge(0.3) Buffer Layer

Photovoltaic Investigations of Interband Transitions in SiGe/Si Multiple Quantum Wells

Difference of luminescent properties between strained InAsP/InP and strain-compensated InAsP/InGaAsP MQWs

Study Of Optical Properties In Gaas1-Xsbx/Gaas Single Quantum Wells

Photoluminescence enhancement by deterministically site-controlled, vertically stacked SiGe quantum dots

Photoluminescence of Ge quantum dots buried in silicon

Raman-Scattering Spectroscopy of Gesi/Si Strained-Layer Superlattice

Strain and Phonon Confinement in Self-Assembled Ge Quantum Dot Superlattices

Photoluminescence of InGaN/AlGaN Strained Multiple Quantum Wells Influenced by Dry Etching

Study of Optical Properties in GaAs1-xSbx/GaAssingle Quant Um Wells

Enhanced photoluminescence due to lateral ordering of GeSi quantum dots on patterned Si(001) substrates.

Photoabsorption and photoresponse behaviors of Si1−xGex/Si quantum wells

Mcrostructure and Optical Properties of Ge(Si) Dots Grown on Si