Abstract:Raman light scattering, low-temperature photoluminescence, light-scattering tomography, and hydrogenation were used to investigate optical properties of defects in strain-relaxed Si_{1-x}Ge_x (0.05 \le x \le 0.50) alloys. The photoluminescence emission was characterized by typical zero-phonon, phonon-assisted, and dislocations-related emissions, which are dependent on Ge composition x. However, luminescence spectra exhibited above band-gap features, which are likely associated with the presence of Si-rich regions in the alloys. The results are correlated with light-scattering tomography, revealing the presence of dislocations and Si precipitates. The excess peak at 519 cm^{-1} in Ge-rich samples is supportive of this observation. At low Ge content, a dislocation-related band (D2 line) at 14,204 {\AA} dominates D-band emission for x < 0.25 while overall D-band emission intensity decreases with x. Hydrogenation was found to enhance D-band emission, indicating a passivation of nonradiative recombination centers inside dislocation cores. Si-Si, Si-Ge, and Ge-Ge phonons (TO, TA, and LA), which are participating in luminescence emission, evolve with increasing Ge content and Ge-Ge and Si-Ge TO lines dominate the Raman spectrum to the detriment of the Si-Si TO phonon line. Raman spectra reveal the presence of alloy fluctuations and possible presence of Ge particles, particularly in Ge-rich samples.

Near Band-Edge Photoluminescence in Strained and Relaxed Si<sub><b>1</b>-<b>x</b></sub>Ge<sub><b>x</b></sub>/Si Quantum Wells

Photoluminescence from Strained SiGe/Si Quantum Well Structures Grown by Si Molecular Beam Epitaxy

Luminescence of Strain Compensated Si/Si0.62 Ge0.38 Quantum Well Grown on Si0.75 Ge0.25 Virtual Substrate

Photoluminescence spectra from SiGe/Si strained layer quantum well structure

Room Temperature Photoluminescence of Tensile-Strained Ge/Si0.13ge0.87 Quantum Wells Grown on Silicon-Based Germanium Virtual Substrate

Quantum-confined direct band transitions in tensile strained Ge/SiGe quantum wells on silicon substrates.

Difference of luminescent properties between strained InAsP/InP and strain-compensated InAsP/InGaAsP MQWs

Annealing effect of Si/Si1-x/Gex/Si single quantum wells studied by admittance spectroscopy

Photovoltaic Investigations of Interband Transitions in SiGe/Si Multiple Quantum Wells

Resonant cavity enhanced photoluminescence of tensile strained Ge/SiGe quantum wells on silicon-on-insulator substrate

Luminescent Properties of Annealed and Directly Wafer-Bonded InAsP/InGaAsP Multiple Quantum Wells

Room Temperature Electroluminescence from Tensile-Strained Si0.13Ge0.87/Ge Multiple Quantum Wells on a Ge Virtual Substrate.

Photoluminescence from Trapped Excitons in Quantum Well Structures

Room Temperature Direct-Bandgap Electroluminescence from N-Type Strain-Compensated Ge/SiGe Multiple Quantum Wells

Defect studies in strain-relaxed Si$_{1-x}$Ge$_x$ alloys

Photoabsorption and photoresponse behaviors of Si1−xGex/Si quantum wells

Thermal Stability of a Si/Si1−xGex Quantum Well Studied by Admittance Spectroscopy

Anti-relaxation of tensile lattice strain in Si-embedded Ge strip structure for photonic device applications

Investigation of quantum-confinement effect and Stokes shift in strained Ga1−xInxN/GaN double quantum wells by spectroscopic ellipsometry and photoluminescence

Cavity-Enhanced Photoluminescence Of Sige/Si Multiquantum Wells Grown On Silicon-On-Insulator Substrate

Enhanced Photoluminescence of Strained Ge with a Δ-Doping SiGe Layer on Silicon and Silicon-on-insulator