Abstract:In this study, we developed very simple and ULSI (ultra large scale integration) compatible fabrication processes for group-IV (Si 1 –x Ge x and Si) semiconductor quantum dots (QDs) to apply hybrid ULSIs with photonic and electron devices, using double Ge + /Si + hot-ion implantation into a SiO 2 layer with larger bandgap E G and the post-furnace annealing. We successfully demonstrated the near-infrared (IR) photoluminescence (PL) from Si 1 –x Ge x -QDs. Transmission electron microscopy observations of single-crystallized Si 1 –x Ge x -QDs revealed that the diameter and the QD density were 3.6 ± 0.9 nm and (2.6 ± 0.4) × 10 12 cm −2 , respectively. In addition, Ge atoms were detected in the Si 1 –x Ge x -QDs by the energy dispersive x-ray spectroscopy analysis, and the Ge fraction of Si 1– x Ge x -QDs was varied from 0.06 to 0.26 by changing the Ge ion dose. The increase in the PL intensity by forming gas annealing was attributed to the dangling-bond reduction by the H-atom termination method. The PL spectrum of Si 1 –x Ge x -QDs was fitted by PL components of two QD structures containing Si 1 –x Ge x and Si materials. The PL intensity and PL-peak photon energy of Si 1 –x Ge x -QDs strongly depended on the Ge fraction. The Si 1 –x Ge x -QDs achieved the maximum PL intensity at x ≈ 0.13. High PL-peak photon energy (∼1.31 eV) of Si 1 –x Ge x -QDs is attributed to the quantum confinement effect of carriers in QDs. Consequently, group-IV semiconductor QDs including Si 1 –x Ge x , Si, SiC, and C, through the simple hot-ion implantation into the SiO 2 layer, exhibited a wide range of PL emissions from the near-IR to ultraviolet regions.

Enhanced photoluminescence due to lateral ordering of GeSi quantum dots on patterned Si(001) substrates.

Optical properties of Ge/Si quantum dot superlattices

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Fabrication and Photoluminescence Study of Large-Area Ordered and Size-Controlled GeSi Multi-quantum-well Nanopillar Arrays

Tunable Photoluminescence of Self-Assembled GeSi Quantum Dots by B+ Implantation and Rapid Thermal Annealing

Ordering of low-density Ge quantum dot on patterned Si substrate

Systematic Studies of the Photoluminescence of Ge Quantum Dots Grown on Strained Si(0.7)Ge(0.3) Buffer Layer

Photoluminescence enhancement by deterministically site-controlled, vertically stacked SiGe quantum dots

Precisely ordered Ge quantum dots on a patterned Si microring for enhanced light-emission

Excitation intensity dependence of photoluminescence spectra of SiGe quantum dots grown on prepatterned Si substrates: Evidence for biexcitonic transition

Near infrared photoluminescence of Si1–xGex quantum dots fabricated by double hot Ge+/Si+ implantation into SiO2 layer

Nanoheteroepitaxy of Ge and SiGe on Si: role of composition and capping on quantum dot photoluminescence

Photoluminescence from Strained SiGe/Si Quantum Well Structures Grown by Si Molecular Beam Epitaxy

Plasmon-Enhanced Surface-State Emission of CdSe Quantum Dots and Its Application to Microscale Luminescence Patterns

Promising modulation of self-assembled Ge-rich QDs by ultra-heavy phosphorus doping

Pinning of Photoluminescence Peak Positions for Light-Emitting Porous Silicon: an Evidence of Quantum Size Effect.

Photoluminescence of Ge quantum dots buried in silicon

Formation and Characterization of Multilayer GeSi Nanowires on Miscut Si (001) Substrates

Effect of Graphene on Photoluminescence Properties of Graphene/gesi Quantum Dot Hybrid Structures

On the Origin of Strong Visible Photoluminescence in a Ge / Porous Si Structure

Mcrostructure and Optical Properties of Ge(Si) Dots Grown on Si