Abstract:Arrays of vertically aligned single crystalline Si nanowires (NWs) decorated with arbitrarily shaped Si nanocrystals (NCs) have been fabricated by a silver assisted wet chemical etching method. Scanning electron microscopy and transmission electron microscopy are performed to measure the dimensions of the Si NWs as well as the Si NCs. A strong broad band and tunable visible (2.2 eV) to near-infrared (1.5 eV) photoluminescence (PL) is observed from these Si NWs at room temperature (RT). Our studies reveal that the Si NCs are primarily responsible for the 1.5-2.2 eV emission depending on the cross-sectional area of the Si NCs, while the large diameter Si/SiOx NWs yield distinct NIR PL consisting of peaks at 1.07, 1.10 and 1.12 eV. The latter NIR peaks are attributed to TO/LO phonon assisted radiative recombination of free carriers condensed in the electron-hole plasma in etched Si NWs observed at RT for the first time. Since the shape of the Si NCs is arbitrary, an analytical model is proposed to correlate the measured PL peak position with the cross-sectional area (A) of the Si NCs, and the bandgap (E(g)) of nanostructured Si varies as E(g) = E(g) (bulk) + 3.58 A(-0.52). Low temperature PL studies reveal the contribution of non-radiative defects in the evolution of PL spectra at different temperatures. The enhancement of PL intensity and red-shift of the PL peak at low temperatures are explained based on the interplay of radiative and non-radiative recombinations at the Si NCs and Si/SiO(x) interface. Time resolved PL studies reveal bi-exponential decay with size correlated lifetimes in the range of a few microseconds. Our results help to resolve a long standing debate on the origin of visible-NIR PL from Si NWs and allow quantitative analysis of PL from arbitrarily shaped Si NCs.

Formation and Characterization of Multilayer GeSi Nanowires on Miscut Si (001) Substrates

A Promising Routine to Fabricate GeSi Nanowires Via Self-Assembly on Miscut Si (001) Substrates

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

Ni induced lateral crystallization of high density Ge-dots/Si heterostructures

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Enhanced photoluminescence due to lateral ordering of GeSi quantum dots on patterned Si(001) substrates.

Origin of visible and near-infrared photoluminescence from chemically etched Si nanowires decorated with arbitrarily shaped Si nanocrystals

Si1-Xgex/Si Multiple Quantum Well Wires Fabricated Using Selective Etching

Nanoheteroepitaxy of Ge and SiGe on Si: role of composition and capping on quantum dot photoluminescence

Fabrication and Photoluminescence Study of Large-Area Ordered and Size-Controlled GeSi Multi-quantum-well Nanopillar Arrays

Fabrication and Characterization of Ordered GeSi Nanoislands on Si (001) Substrates

500-period epitaxial Ge/Si0.18Ge0.82 multi-quantum wells on silicon

Controlled Formation of GeSi Nanostructures on Periodic Si (001) Sub-Micro Pillars.

Strain and optical characteristics analyses of three-dimentional self-ordered multilayered SiGe nanodots by photoluminescence and Raman spectroscopy

Sil−xGex/Si Multiple Quantum Well Wires Fabricated Using Selective Etching

Fast and intense photoluminescence in a SiGe nano-layer embedded in multilayers of Si/SiGe clusters

Fabrication and Characterization of Ge Nanodot/si Nanowire Composite Structures

Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)

Promising Features of Low-Temperature Grown Ge Nanostructures on Si(001) Substrates

Depth-dependent Photoluminescence Characteristic of GeSn/SiGeSn Multi-Quantum Wells

Formation of NiSiGe on Compressivly Strained SiGe Thin Layers