Abstract:Artificially ordered Ge quantum dot (QD) arrays, where confined carriers can interact via exchange coupling, may create unique functionalities such as cluster qubits and spintronic bandgap systems. Development of such arrays for quantum computing requires fine control over QD size and spatial arrangement on the sub-35 nm length scale. We employ fine-probe electron-beam irradiation to locally decompose ambient hydrocarbons onto a bare Si (001) surface. These carbonaceous patterns are annealed in UHV, forming ordered arrays of nanoscale SiC precipitates that serve as templates for subsequent Ge quantum dot self-assembly during heteroepitaxy. This templating approach has so far produced interdot spacings down to 22.5 nm, and smaller spacings should be possible. We investigate the templated feature evolution during UHV processing to identify key mechanisms that must be controlled in order to preserve pattern fidelity and reduce broadening of the quantum dot size distribution. A key finding is that the presence of a small background of excess carbon reduces Ge surface diffusion, thereby suppressing coarsening to relatively high temperatures. In fact, coarsening of the carbonaceous nanodot template prior to conversion to SiC can be a more important contributor to size dispersion, and must be avoided through control of thermal budget.

Controlled Formation of GeSi Nanostructures on Periodic Si (001) Sub-Micro Pillars.

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

Controllable growth of GeSi nanostructures by molecular beam epitaxy

Study of Si and Ge growth on Si(100) surface

Ni induced lateral crystallization of high density Ge-dots/Si heterostructures

Circularly Organized Quantum Dot Nanostructures of Ge on Si Substrates

Fabrication and Characterization of Ordered GeSi Nanoislands on Si (001) Substrates

Mechanisms for directed self-assembly of heteroepitaxial Ge/Si quantum dots with deterministic placement and sub-23nm spacing on SiC nanotemplates

Competitive Growth of Ge Quantum Dots on a Si Micropillar with Pits for a Precisely Site-Controlled QDs/Microdisk System

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Ordered GeSi nanorings grown on patterned Si (001) substrates

Growth of Zirconium Silicide Nanostructures on Vicinal and Flat Si(111)-7 × 7 Surfaces

A Promising Routine to Fabricate GeSi Nanowires Via Self-Assembly on Miscut Si (001) Substrates

Small ordered Ge quantum dots growth on Si (100) hollow nanopillars

Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)

Microstructures of Ge-dots/Si Multilayered Structures Fabricated by Ni-induced Lateral Crystallization

Fabrication and Photoluminescence Study of Large-Area Ordered and Size-Controlled GeSi Multi-quantum-well Nanopillar Arrays

Towards Controllable Growth of Self-Assembled Sige Single and Double Quantum Dot Nanostructures

Silicon-based low dimensional quantum structure - self-assembly grown germanium quantum dots