Abstract:Artificially ordered Ge quantum dot (QD) arrays, where confined carriers can interact via exchange coupling, may create unique functionalities such as cluster qubits and spintronic bandgap systems. Development of such arrays for quantum computing requires fine control over QD size and spatial arrangement on the sub-35 nm length scale. We employ fine-probe electron-beam irradiation to locally decompose ambient hydrocarbons onto a bare Si (001) surface. These carbonaceous patterns are annealed in UHV, forming ordered arrays of nanoscale SiC precipitates that serve as templates for subsequent Ge quantum dot self-assembly during heteroepitaxy. This templating approach has so far produced interdot spacings down to 22.5 nm, and smaller spacings should be possible. We investigate the templated feature evolution during UHV processing to identify key mechanisms that must be controlled in order to preserve pattern fidelity and reduce broadening of the quantum dot size distribution. A key finding is that the presence of a small background of excess carbon reduces Ge surface diffusion, thereby suppressing coarsening to relatively high temperatures. In fact, coarsening of the carbonaceous nanodot template prior to conversion to SiC can be a more important contributor to size dispersion, and must be avoided through control of thermal budget.

Ordered GeSi nanorings grown on patterned Si (001) substrates

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

Ordering of low-density Ge quantum dot on patterned Si substrate

Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)

Controlled Formation of GeSi Nanostructures on Periodic Si (001) Sub-Micro Pillars.

Circularly Organized Quantum Dot Nanostructures of Ge on Si Substrates

Fabrication and Characterization of Ordered GeSi Nanoislands on Si (001) Substrates

Self-Assembled Sige Quantum Rings Grown on Si(001) by Molecular Beam Epitaxy

Study of Si and Ge growth on Si(100) surface

Controllable growth of GeSi nanostructures by molecular beam epitaxy

Ni induced lateral crystallization of high density Ge-dots/Si heterostructures

Influencing factors on the size uniformity of self-assembled SiGe quantum rings grown by molecular beam epitaxy.

High-density Ge Dots Grown on Si Substrate by Modified S-K Method

Small ordered Ge quantum dots growth on Si (100) hollow nanopillars

Ingan Nanorings And Nanodots By Selective Area Epitaxy

Precisely ordered Ge quantum dots on a patterned Si microring for enhanced light-emission

Growth Mechanism Of Gesi Quantum Rings On Si(001)

Optimal Growth of Ge-rich Dots on Si(001) Substrates with Hexagonal Packed Pit Patterns.

Densely packed Ge quantum dots grown on SiO2/Si substrate☆

Mechanisms for directed self-assembly of heteroepitaxial Ge/Si quantum dots with deterministic placement and sub-23nm spacing on SiC nanotemplates