Abstract:Abstract Low-dimensional semiconductor structurers formed on a substrate surface at pre-defined locations and with nano-precision placement is of vital interest. The potential of tailoring their electrical and optical properties will revolutionize the next generation of optoelectronic devices. Traditionally, highly aligned self-assembly of semiconductors relies on Stranski- Krastanov growth mode. In this work, we demonstrate a pathway towards ordered configuration of Ge islands on low lattice mismatch GaAs (110) substrate patterned using depth-controlled nanoindentation. Diamond probe tips with different geometries are used to nano-mechanically stamp the surface of GaAs (110). This creates nanoscale volumes of dislocation-mediated deformation which acts to bias nucleation. Results show that nanostamped GaAs exhibits selective-nucleation of Ge at the indent sites. Ge islands formed on a surface patterned using cube corner tip have height of ~10 nm and lateral size of ~225 nm. Larger islands are formed by using Vickers and Berkovich diamond tips (~400 nm). The strain state of the patterned structures is characterized by micro-Raman spectroscopy. A strain value up to 2% for all tip geometries has been obtained. Additionally, strong room temperature photoluminescence (PL) emission is observed around 1.9 μm (650 meV). The observed strain-induced enhancement in the light-emission efficiency is attributed to direct conduction to heavy-hole (cΓ-HH) and conduction to light-hole (cΓ-LH) transitions. The inherent simplicity of the proposed method offers an attractive technique to manufacture semiconductor quantum dot structures for future electronic and photonic applications.

Fabrication and Characterization of Ordered GeSi Nanoislands on Si (001) Substrates

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

Controlled Formation of GeSi Nanostructures on Periodic Si (001) Sub-Micro Pillars.

Study of Si and Ge growth on Si(100) surface

Si-based Nanoscale SiO2 Islands and Light-Emitting Source Array

Fabrication and Photoluminescence Study of Large-Area Ordered and Size-Controlled GeSi Multi-quantum-well Nanopillar Arrays

Ordered GeSi nanorings grown on patterned Si (001) substrates

Mechanical Nano-Patterning: Toward Highly-Aligned Ge Self-Assembly on Low Lattice Mismatched GaAs Substrate

A Promising Routine to Fabricate GeSi Nanowires Via Self-Assembly on Miscut Si (001) Substrates

Ni induced lateral crystallization of high density Ge-dots/Si heterostructures

Dislocation-free Ge Nano-crystals via Pattern Independent Selective Ge Heteroepitaxy on Si Nano-Tip Wafers

Controllable growth of GeSi nanostructures by molecular beam epitaxy

Fabrication of core-shell nanostructures via silicon on insulator dewetting and germanium condensation: towards a strain tuning method for SiGe-based heterostructures in a three-dimensional geometry

Formation and Characterization of Multilayer GeSi Nanowires on Miscut Si (001) Substrates

Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)

Self-organized germanium quantum dots grown by molecular beam epitaxy on Si(100)

Fabrication of SiGe/Ge nanostructures by three-dimensional Ge condensation of sputtered SiGe on SiO2/Si substrate

A nano-droplet hydrodynamic transformation of uniform amorphous bilayer into highly modulated Ge/Si island-chains.

Photonic bound states in the continuum in Si structures with the self-assembled Ge nanoislands

Controllable Fabrication of GeSi Nanowires in Diameter of about 10 Nm Using the Top-Down Approach