Abstract:Modern nanotechnology offers routes to create new artificial materials, widening the functionality of devices in physics, chemistry, and biology. Templated self-organization has been recognized as a possible route to achieve exact positioning of quantum dots to create quantum dot arrays, molecules, and crystals. Here we employ extreme ultraviolet interference lithography (EUV-IL) at a wavelength of lambda = 13.5 nm for fast, large-area exposure of templates with perfect periodicity. Si(001) substrates have been patterned with two-dimensional hole arrays using EUV-IL and reactive ion etching. On these substrates, three-dimensionally ordered SiGe quantum dot crystals with the so far smallest quantum dot sizes and periods both in lateral and vertical directions have been grown by molecular beam epitaxy. X-ray diffractometry from a sample volume corresponding to about 3.6 x 10(7) dots and atomic force microscopy (AFM) reveal an up to now unmatched structural perfection of the quantum dot crystal and a narrow quantum dot size distribution. Intense interband photoluminescence has been observed up to room temperature, indicating a low defect density in the three-dimensional (3D) SiGe quantum dot crystals. Using the Ge concentration and dot shapes determined by X-ray and AFM measurements as input parameters for 3D band structure calculations, an excellent quantitative agreement between measured and calculated PL energies is obtained. The calculations show that the band structure of the 3D ordered quantum dot crystal is significantly modified by the artificial periodicity. A calculation of the variation of the eigenenergies based on the statistical variation in the dot dimensions as determined experimentally (+/-10% in linear dimensions) shows that the calculated electronic coupling between neighboring dots is not destroyed due to the quantum dot size variations. Thus, not only from a structural point of view but also with respect to the band structure, the 3D ordered quantum dots can be regarded as artificial crystal.

Circularly Organized Quantum Dot Nanostructures of Ge on Si Substrates

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

Silicon-based low dimensional quantum structure - self-assembly grown germanium quantum dots

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

Mechanisms for directed self-assembly of heteroepitaxial Ge/Si quantum dots with deterministic placement and sub-23nm spacing on SiC nanotemplates

Controlled Formation of GeSi Nanostructures on Periodic Si (001) Sub-Micro Pillars.

Three-dimensional Si/Ge quantum dot crystals

Towards Controllable Growth of Self-Assembled Sige Single and Double Quantum Dot Nanostructures

Large-scale Si<sub>1−<i>x</i></sub>Ge<sub><i>x</i></sub> quantum dot arrays fabricated by templated catalytic etching

Germanium Quantum-Dot Array with Self-Aligned Electrodes for Quantum Electronic Devices

Densely packed Ge quantum dots grown on SiO2/Si substrate☆

Si-Based Microcavity Devices With Ge Quantum Dots

Nanoheteroepitaxy of Ge and SiGe on Si: role of composition and capping on quantum dot photoluminescence

Ordered GeSi nanorings grown on patterned Si (001) substrates

Thermally Oxidized Formation Of New Ge Dots Over As-Grown Ge Dots In The Si Capping Layer

Ordering of low-density Ge quantum dot on patterned Si substrate

A Two-Stage Molecular Beam Epitaxial Growth Method to Fabricate Small and Uniform Ge Quantum Dots on Si(1 0 0)

Optical properties of Ge/Si quantum dot superlattices

A two-stage molecular beam epitaxial growth method to fabricate small and uniform Ge quantum dots on Si(100)