Abstract:Modern nanotechnology offers routes to create new artificial materials, widening the functionality of devices in physics, chemistry, and biology. Templated self-organization has been recognized as a possible route to achieve exact positioning of quantum dots to create quantum dot arrays, molecules, and crystals. Here we employ extreme ultraviolet interference lithography (EUV-IL) at a wavelength of lambda = 13.5 nm for fast, large-area exposure of templates with perfect periodicity. Si(001) substrates have been patterned with two-dimensional hole arrays using EUV-IL and reactive ion etching. On these substrates, three-dimensionally ordered SiGe quantum dot crystals with the so far smallest quantum dot sizes and periods both in lateral and vertical directions have been grown by molecular beam epitaxy. X-ray diffractometry from a sample volume corresponding to about 3.6 x 10(7) dots and atomic force microscopy (AFM) reveal an up to now unmatched structural perfection of the quantum dot crystal and a narrow quantum dot size distribution. Intense interband photoluminescence has been observed up to room temperature, indicating a low defect density in the three-dimensional (3D) SiGe quantum dot crystals. Using the Ge concentration and dot shapes determined by X-ray and AFM measurements as input parameters for 3D band structure calculations, an excellent quantitative agreement between measured and calculated PL energies is obtained. The calculations show that the band structure of the 3D ordered quantum dot crystal is significantly modified by the artificial periodicity. A calculation of the variation of the eigenenergies based on the statistical variation in the dot dimensions as determined experimentally (+/-10% in linear dimensions) shows that the calculated electronic coupling between neighboring dots is not destroyed due to the quantum dot size variations. Thus, not only from a structural point of view but also with respect to the band structure, the 3D ordered quantum dots can be regarded as artificial crystal.

Large-scale Si<sub>1−<i>x</i></sub>Ge<sub><i>x</i></sub> quantum dot arrays fabricated by templated catalytic etching

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Mechanisms for directed self-assembly of heteroepitaxial Ge/Si quantum dots with deterministic placement and sub-23nm spacing on SiC nanotemplates

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Three-dimensional Si/Ge quantum dot crystals

Tailoring the Interfacial Structure of Colloidal "giant" Quantum Dots for Optoelectronic Applications.

Germanium Quantum-Dot Array with Self-Aligned Electrodes for Quantum Electronic Devices

Circularly Organized Quantum Dot Nanostructures of Ge on Si Substrates

Towards Controllable Growth of Self-Assembled Sige Single and Double Quantum Dot Nanostructures

A two-stage molecular beam epitaxial growth method to fabricate small and uniform Ge quantum dots on Si(100)

Small-Size Ge/Si(001) Quantum Dots Grown By Molecular Boam Epitaxy

Fabrication and Photoluminescence Study of Large-Area Ordered and Size-Controlled GeSi Multi-quantum-well Nanopillar Arrays

Small ordered Ge quantum dots growth on Si (100) hollow nanopillars

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

Competitive Growth of Ge Quantum Dots on a Si Micropillar with Pits for a Precisely Site-Controlled QDs/Microdisk System

A Two-Stage Molecular Beam Epitaxial Growth Method to Fabricate Small and Uniform Ge Quantum Dots on Si(1 0 0)

Fabrication of quantum dots in undoped Si/Si$_{0.8}$Ge$_{0.2}$ heterostructures using a single metal-gate layer

Nanoheteroepitaxy of Ge and SiGe on Si: role of composition and capping on quantum dot photoluminescence

Quantum dot arrays in silicon and germanium

Toward Precise Site-Controlling of Self-Assembled Ge Quantum Dots on Si Microdisks.

Densely packed Ge quantum dots grown on SiO2/Si substrate☆