Abstract:We present low-frequency Raman scattering measurements on self-assembled Ge/Si quantum dot superlattice samples grown by molecular beam epitaxy. The samples had different growth parameters, such as the number of periods, nominal thicknesses of Ge layers, and growth temperatures. Raman scattering peaks were observed in the low-frequency region (<30cm(-1)), which were attributed to the folded acoustic phonon modes related to the periodicity of the Ge/Si quantum dot superlattices. We applied Rytov's model to calculate the frequencies of the folded acoustic phonons in the Ge/Si quantum dot superlattices. The calculated frequencies were in good accordance with the experimental results among most of the samples. It was observed from the experiments that the Raman peak intensities decreased with the increased order of the folded acoustic phonons. Raman peak intensities from different order folded acoustic phonons were explained by photoelastic effect theory. It was also found that the intensities of Raman peaks were related to the Ge layer thickness and the periods of the Ge/Si quantum dot superlattices: the thinner the Ge layer thickness, the lower the intensity; the smaller the periods, the lower the intensity of the Raman peaks.

Strain and Phonon Confinement in Self-Assembled Ge Quantum Dot Superlattices

Optical Phonons in Self-Assembled Ge Quantum Dot Superlattices: Strain Relaxation Effects

Optical and Acoustic Phonon Modes in Self-Organized Ge Quantum Dot Superlattices

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

Optical properties of Ge/Si quantum dot superlattices

Study of Phonons in Self-Organized Multiple Ge Quantum Dots

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Folded Acoustic Phonon Modes in Ge/Si Quantum Dot Superlattices with Different Periods

Effect of interdiffusion and quantum confinement on Raman spectra of the Ge/Si(100) heterostructures with quantum dots

The Role of Interdiffusion and Spatial Confinement in the Formation of Resonant Raman Spectra of Ge/Si(100) Heterostructures with Quantum-Dot Arrays

Effects of Hydrostatic Pressure on Raman Scattering in Ge Quantum Dot Superlattices

Raman Scattering Of Ge/Si Dot Superlattices Under Hydrostatic Pressure

Vibrational properties of Si/Ge superlattices

Phonon and Raman spectra: effect of interface diffusion of strained Si/Ge superlattices

Strain evolution and confinement effect in InAs/AlAs short-period superlattices studied by Raman spectroscopy

Critical Thickness of Self-Assembled Ge Quantum Dot Superlattices

Strain and optical characteristics analyses of three-dimentional self-ordered multilayered SiGe nanodots by photoluminescence and Raman spectroscopy

Phonon-Spectra Of Strained Si And Ge

Strain tensor and electron and hole spectra in self-assembled InGaAs/GaAs and SiGe/Si quantum dots

Confinement Effect of Optical Phonons in Si–Ge Alloy Nanocrystals

Acoustic Attenuation and Optical-Absorption Effects on Light Scattering by Acoustic Phonons in Superlattices.