Abstract:Pressure has been considered as an effective technique to modulate the structural, electronic, and optical properties of transition metal dichalcogenide (TMDs) materials. Here, by performing in situ high pressure Raman, photoluminescence (PL) and absorption measurements, we systematically investigated the vibrational and electronic properties evolution of monolayer MoSe2 grown on a SiO2/Si substrate under high pressure. When the pressure increased up to 4.84 GPa, an unexpected phonon mode at 367 cm-1 appeared, which was identified as the Raman-inactive A2'' mode and was activated under high pressure. Combined with the analysis of absorption spectroscopy, this phenomenon can be attributed to the pressure-induced wrinkle and near-resonance effects in compressed monolayer MoSe2. Subsequently, A1' split into two peaks after 7.44 GPa, providing further distinct evidence for the pressure-induced wrinkle effect in compressed monolayer MoSe2. Moreover, this wrinkle effect can also lead to a rapid quenching of photoluminescence in monolayer MoSe2. These results suggest that the substrate plays an important role in determining the vibrational and electronic properties of compressed monolayer MoSe2, and can provide valuable information on the electronic and optoelectronic applications of monolayer MoSe2 under extreme conditions.

Raman Scattering Of Ge/Si Dot Superlattices Under Hydrostatic Pressure

Effects of Hydrostatic Pressure on Raman Scattering in Ge Quantum Dot Superlattices

Effects Of Hydrostatic Pressure On Raman Scattering In Ge Quantum Dots

Optical properties of Ge/Si quantum dot superlattices

Electronic structure of Ge/SixSnyGe1−x−y quantum dots

Optical and Acoustic Phonon Modes in Self-Organized Ge Quantum Dot Superlattices

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Light Scattering by Superlattice Acoustic Modes at Critical Points of the Brillouin Zone

Effect of interdiffusion and quantum confinement on Raman spectra of the Ge/Si(100) heterostructures with quantum dots

Strain and Phonon Confinement in Self-Assembled Ge Quantum Dot Superlattices

The Role of Interdiffusion and Spatial Confinement in the Formation of Resonant Raman Spectra of Ge/Si(100) Heterostructures with Quantum-Dot Arrays

Pressure-Dependent Phonon Scattering of Layered GaSe Prepared by Mechanical Exfoliation*

Optical Phonons in Self-Assembled Ge Quantum Dot Superlattices: Strain Relaxation Effects

Folded Acoustic Phonon Modes in Ge/Si Quantum Dot Superlattices with Different Periods

Raman Scattering in Hcp Rare Gas Solids under Pressure

Raman-Scattering Spectroscopy of Gesi/Si Strained-Layer Superlattice

Resonant Raman scattering from ZnS0.02Te0.98 mixed crystal under hydrostatic pressure

Study of Phonons in Self-Organized Multiple Ge Quantum Dots

Wrinkle and Near-Resonance Effects on the Vibrational and Electronic Properties in Compressed Monolayer MoSe2

Unusual structure and properties of germanium under pressure

Semiconductor Photoelastic Constants Measured by Light Scattering in Superlattices.