Abstract:The electroluminescence (EL) at room temperature from Au-extra-thin silicon oxynitride (ETSON)-p-Si and Au-ETSON-n-Si structures is reported. The ETSON films (similar to 80 Angstrom) were deposited by the rf magnetron sputtering technique, and Si3N4-Si composite targets were used (the area ratio of Si to Si3N4 was similar to 6%). The EL spectra were measured under forward bias greater than or equal to 4 V after the ETSON films had been annealed at 300, 600, 800, and 1000 degrees C in N-2 ambient for 30 min. The Au-ETSON-p-Si structure has a dominant EL band with peak wavelength around 680 nm, and its integrated EL efficiency is an order of magnitude higher than that from a Au-extra-thin Si-rich SiO2 (ETSSO) film (similar to 80 Angstrom)-p-Si structure. Distinguishing it from the Au-ETSSO-Si structure, which emits visible EL only when it is fabricated on p-Si, EL can also be observed in the Au-ETSON-n-Si structure under forward bias, and the two dominant EL bands peak one at around 700 nm and one at around 800 nm. Electron beam irradiation induces a new EL band peaked at 500 nm in the EL spectrum from an Au-ETSON-p-Si structure. From the experimental results it is suggested that electrons and holes from opposite sides tunnel into the ETSON layer and recombine radiatively at luminescence centres there.

Electroluminescence Spectra Study of Au/Si/SiO2 Superlattice/p‐si Structures with Gamma Irradiation

Electroluminescence from amorphous SiSiO2 superlattices

Electroluminescence from Si/Si Oxynitride Superlattices

Electroluminescence from Semitransparent Au Film/Sio2/(Amorphous-Si/Sio2) Superlattice/P-Si Structure

Electroluminescence from Au/(SiO2/Si/SiO2) Nanometer Double Barrier/p-Si Structures and Its Mechanism

Electroluminescence from an Au-Extra-Thin Silicon Oxynitride Film Si Structure

ELECTROLUMINESENCE FROM Au/(SiO2/Si/SiO2)NANOSCALE DOUBLE-BARRIER/n+-Si STRUCTURE

Electroluminescence from Au/(Nanoscale Ge/Nanoscale Sio2) Superlattices/P-Si

Visible Electroluminescence from Semitransparent Au Film/extra Thin Si-rich Silicon Oxide Film/p-Si Structure

Synchronized Swinging of Electroluminescence Intensity and Peak Wavelength with Si Layer Thickness in Au/SiO2/nanometer Si/SiO2/p-Si Structures

Effects of chemical composition of Si oxynitride on electroluminescence from semitransparent Au/extra thin Si oxynitride film/ p-Si structures

Electroluminescence from Au/extra thin nanosize Ge particles embedded silicon oxide film/p-Si and Au/extra thin nanosize Si particles embedded silicon oxide film/p-Si

Electroluminescence of Si,Ge and Ar IOn-Implanted Si-Rich SiO2

Electroluminescence from Au/Si Oxynitride Film/si Structures with the Films Having Different Chemical Compositions

Luminescence Studies of a Si/SiO2 Superlattice

Gamma-Ray Irradiation Effects on Electroluminescence from Au/Extra Thin Si-Rich SiO2 Film/p-Si Structures

Electroluminescence from Au Native Silicon Oxide Layer P(+)-Si and Au Native Silicon Oxide Layer N(+)-Si Structures under Reverse Biases

Fairly pure ultraviolet electroluminescence from p-Si-based SiOx/ZnO/SiOx double-barrier device

ELECTROLUMINESCENCE FROM NANOSCALE Si-PARTICLES EMBEDDED SiO2 FILMS DEPOSITED ON n+-Si AND p-Si SUBSTRATES

Influences of Thicknesses of SiO2 Layers on Electroluminescence from Amorphous Si/SiO2 Superlattices

Electroluminescence from Semitransparent Au Film/nanometer SiO2/nanometer Si/nanometer SiO2/n+–Si Structure under Reverse Bias