Gamma-Ray Irradiation Effects on Electroluminescence from Au/Extra Thin Si-Rich SiO2 Film/p-Si Structures

An‐Ping Li,Borui Zhang,Yijuan Qiao,G. G. Qin,Zhanfang Ma,W. H. Zong
DOI: https://doi.org/10.1088/0256-307x/15/4/025
1998-01-01
Abstract:We have studied the effects of γ-ray irradiation on electroluminescence (EL) from Au/extra thin Si-rich SiO2 film/p-Si Structures. After γ-ray irradiation, for the structure with a 600°C annealed Si-rich SiO2 film a new blue EL band with a peak at around 480 nm was observed, and for the structure with a 300°C annealed Si-rich SiO2 film the red EL band shifts from 670 to 660 nm and its intensity and full width at half maximum increase pronouncedly. The experimental results demonstrate that the defects induced by γ-ray irradiation are responsible for the blue EL band as well as for the variations of the red EL band.
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