Abstract:We have previously developed silicon-based light-emitting devices (LEDs) with luminescent erbium (Er)-doped TiO2 (TiO2:Er) films [Yang et al., Appl. Phys. Lett. 100, 031103 (2012)]. In an LED therein, the TiO2:Er film is sandwiched between the ITO film and heavily boron-doped p-type silicon (p+-Si). In this work, we have investigated the electroluminescence (EL) from two LEDs with the TiO2:Er films annealed at 650 and 850 °C, respectively. It is revealed that between the TiO2:Er film and p+-Si, there is an intermediate silicon oxide (SiOx, x ≤ 2) layer and its thickness increases from ∼4 to 8 nm with the increase of annealing temperature from 650 to 850 °C. Interestingly, the thickness of the intermediate SiOx layer is found to exhibit a profound impact on the EL from the LED with the TiO2:Er film on p+-Si. The EL from the LED with the 650 °C-annealed TiO2:Er film is activated only under the forward bias with the positive voltage connecting to the p+-Si substrate. Such EL consists of the oxygen-vacancy-related emissions from TiO2 host and the characteristic visible and ∼1540 nm emissions from the Er3+ ions, while the EL from the LED with the 850 °C-annealed TiO2:Er film can only be enabled by the reverse bias with the negative voltage applied on the p+-Si substrate. Such EL features only the visible and ∼1540 nm emissions from the Er3+ ions. The difference in the EL behaviors of the two LEDs as mentioned above is found to be ascribed to the different electrical conduction mechanisms.

Electroluminescence from Au/extra thin nanosize Ge particles embedded silicon oxide film/p-Si and Au/extra thin nanosize Si particles embedded silicon oxide film/p-Si

Electroluminescence from Au/(Nanoscale Ge/Nanoscale Sio2) Superlattices/P-Si

ELECTROLUMINESENCE FROM Au/(SiO2/Si/SiO2)NANOSCALE DOUBLE-BARRIER/n+-Si STRUCTURE

ELECTROLUMINESCENCE FROM NANOSCALE Si-PARTICLES EMBEDDED SiO2 FILMS DEPOSITED ON n+-Si AND p-Si SUBSTRATES

Electroluminescence Spectra Study of Au/Si/SiO2 Superlattice/p‐si Structures with Gamma Irradiation

Effects of chemical composition of Si oxynitride on electroluminescence from semitransparent Au/extra thin Si oxynitride film/ p-Si structures

Visible Electroluminescence from Semitransparent Au Film/extra Thin Si-rich Silicon Oxide Film/p-Si Structure

Electroluminescence from an Au-Extra-Thin Silicon Oxynitride Film Si Structure

Electroluminescence from Sio2 Thin Film Embedded with Self-Assembled Gold Nanoparticles

Electroluminescence from Au/(SiO2/Si/SiO2) Nanometer Double Barrier/p-Si Structures and Its Mechanism

Electroluminescence from Au/Si Oxynitride Film/si Structures with the Films Having Different Chemical Compositions

Electroluminescence from Au/native oxide/p-Si and its correlation to that from Au/porous Si

Electroluminescence from Silicon-Based Light-Emitting Devices with Erbium-Doped TiO2 Films Annealed at Different Temperatures

Electroluminescence of Silicon-Rich Silicon Nitride Light-Emitting Devices

Electroluminescence from Semitransparent Au Film/Sio2/(Amorphous-Si/Sio2) Superlattice/P-Si Structure

Electroluminescence from amorphous SiSiO2 superlattices

Electroluminescence from Metal–oxide–semiconductor Devices Based on Erbium Silicate Nanocrystals and Silicon Nanocrystals Co-Embedded in Silicon Oxide Thin Films

Electroluminescence of Si,Ge and Ar IOn-Implanted Si-Rich SiO2

Structure and Luminescence Evolution of Annealed Europium-doped Silicon Oxides Films

A comparison study of electroluminescence from Au/native oxide/p-Si and Au/porous Si diodes

Room-Temperature 1.54-Mu M Electroluminescence From The Au/Nanometer (Sio2 : Er/Si/Sio2 : Er)/N(+)-Si Structure