Abstract:SiO2/Si/SiO2 nanometer double barriers (SSSNDB) with Si layers of twenty-seven different thicknesses in a range of 1-5 nm with an interval of 0.2 nm have been deposited on p-Si substrates using two-target alternative magnetron sputtering. Electroluminescence (EL) from the semitransparent Au film/SSSNDB/p-Si diodes and from a control diode without any Si layer have been observed under forward bias. Each EL spectrum of all these diodes can be fitted by two Gaussian bands with peak energies of 1.82 and 2.25 eV, and full widths at half maximum of 0.38 and 0.69 eV, respectively. It is found that the current, EL peak wavelength and intensities of the two Gaussian bands of the Au/SSSNDB/p-Si structure oscillate synchronously with increasing Si layer thickness with a period corresponding to half a de Broglie wavelength of the carriers. The experimental results strongly indicate that the EL originates mainly from two types of luminescence centres with energies of 1.82 and 2.25 eV in the SiO2 barriers, rather than from the nanometer Si well in the SSSNDB. The EL mechanism is discussed in detail.

ELECTROLUMINESCENCE FROM NANOSCALE Si-PARTICLES EMBEDDED SiO2 FILMS DEPOSITED ON n+-Si AND p-Si SUBSTRATES

Electroluminescence from Au/extra-thin Si-rich SiO2 film/n+-Si under reverse biases and its mechanism

Electroluminescence from Au Native Silicon Oxide Layer P(+)-Si and Au Native Silicon Oxide Layer N(+)-Si Structures under Reverse Biases

ELECTROLUMINESENCE FROM Au/(SiO2/Si/SiO2)NANOSCALE DOUBLE-BARRIER/n+-Si STRUCTURE

Visible Electroluminescence from Semitransparent Au Film/extra Thin Si-rich Silicon Oxide Film/p-Si Structure

Bidirectional Direct-Current Electroluminescence from I-Mgxzn1−xo/n-zno/siox Double-Barrier Heterostructures on Si

Electroluminescence from Au/extra thin nanosize Ge particles embedded silicon oxide film/p-Si and Au/extra thin nanosize Si particles embedded silicon oxide film/p-Si

Electroluminescence from Silicon-based Zn_2SiO_4:ZnO Films

Electroluminescence from Au/(SiO2/Si/SiO2) Nanometer Double Barrier/p-Si Structures and Its Mechanism

Electroluminescence from ZnO/n<sup>+</sup>-Si Heterojunction

Electroluminescence from Semitransparent Au Film/nanometer SiO2/nanometer Si/nanometer SiO2/n+–Si Structure under Reverse Bias

Electroluminescence from Sio2 Thin Film Embedded with Self-Assembled Gold Nanoparticles

Fairly pure ultraviolet electroluminescence from p-Si-based SiOx/ZnO/SiOx double-barrier device

Electroluminescence of Silicon-Rich Silicon Nitride Light-Emitting Devices

Electroluminescence Spectra Study of Au/Si/SiO2 Superlattice/p‐si Structures with Gamma Irradiation

Electroluminescence from Au/(Nanoscale Ge/Nanoscale Sio2) Superlattices/P-Si

Electroluminescence of SnO2∕p-Si heterojunction

Electroluminescence of Heterostructures Formed by P+Si and TiO2 Films Derived from Oxidation of Sputtered Ti Films

Enhancement of electroluminescence in p–i–n structures with nano-crystalline Si/SiO<sub>2</sub> multilayers

Electroluminescence from Au/native oxide/p-Si and its correlation to that from Au/porous Si

Electroluminescence from nano-crystalline Si/ SiO2 structures embedded in pn junctions